Abstract
The optical gap Eg of amorphous indium oxide films is measured as a function of static disorder characterized by the dimensionless conductivity g. In the range 1g0.1 the optical gap obeys a scaling relation: ΔEg=-E*Δg where E* is of the order of the Fermi energy of the given sample. These results are ascribed to the continuous shift of the mobility edge in the conduction band with disorder.
Original language | English |
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Pages (from-to) | 6161-6164 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 47 |
Issue number | 10 |
DOIs | |
State | Published - 1993 |