Optical absorption, disorder and the Anderson transition

Z. Ovadyahu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The optical gap, Eg, of amorphous indium-oxide films is measured as a function of static disorder near the metal-insulator transition. On the insulating side of the transition the optical gap obeys a scaling relation, ΔEg = -E*Δg where E* is of the order of the Fermi energy of the given sample and g≡KFl. These results are ascribed to the continuous shift of the mobility-edge in the conduction band with disorder.

Original languageEnglish
Pages (from-to)462-468
Number of pages7
JournalPhysica A: Statistical Mechanics and its Applications
Volume200
Issue number1-4
DOIs
StatePublished - 15 Nov 1993

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