Optical absorption, disorder and the Anderson transition

Z. Ovadyahu

doi:10.1016/0378-4371(93)90547-H

Optical absorption, disorder and the Anderson transition

Z. Ovadyahu^*

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The optical gap, E_g, of amorphous indium-oxide films is measured as a function of static disorder near the metal-insulator transition. On the insulating side of the transition the optical gap obeys a scaling relation, ΔE_g = -E_*Δg where E_* is of the order of the Fermi energy of the given sample and g≡K_Fl. These results are ascribed to the continuous shift of the mobility-edge in the conduction band with disorder.

Original language	English
Pages (from-to)	462-468
Number of pages	7
Journal	Physica A: Statistical Mechanics and its Applications
Volume	200
Issue number	1-4
DOIs	https://doi.org/10.1016/0378-4371(93)90547-H
State	Published - 15 Nov 1993

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10.1016/0378-4371(93)90547-H

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title = "Optical absorption, disorder and the Anderson transition",

abstract = "The optical gap, Eg, of amorphous indium-oxide films is measured as a function of static disorder near the metal-insulator transition. On the insulating side of the transition the optical gap obeys a scaling relation, ΔEg = -E*Δg where E* is of the order of the Fermi energy of the given sample and g≡KFl. These results are ascribed to the continuous shift of the mobility-edge in the conduction band with disorder.",

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N2 - The optical gap, Eg, of amorphous indium-oxide films is measured as a function of static disorder near the metal-insulator transition. On the insulating side of the transition the optical gap obeys a scaling relation, ΔEg = -E*Δg where E* is of the order of the Fermi energy of the given sample and g≡KFl. These results are ascribed to the continuous shift of the mobility-edge in the conduction band with disorder.

AB - The optical gap, Eg, of amorphous indium-oxide films is measured as a function of static disorder near the metal-insulator transition. On the insulating side of the transition the optical gap obeys a scaling relation, ΔEg = -E*Δg where E* is of the order of the Fermi energy of the given sample and g≡KFl. These results are ascribed to the continuous shift of the mobility-edge in the conduction band with disorder.

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IS - 1-4

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Optical absorption, disorder and the Anderson transition

Abstract

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