Optical detection of magnetic fields using giant magnetoresistance in undoped coupled quantum wells

S. Denev; V. Negoita; D. W. Snoke; B. Laikhtman; K. Eberl; L. Pfeiffer

Optical detection of magnetic fields using giant magnetoresistance in undoped coupled quantum wells

S. Denev
, V. Negoita
, D. W. Snoke
, B. Laikhtman
, K. Eberl
, L. Pfeiffer

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We show that undoped coupled quantum well structures of GaAs and InGaAs have a magnetoresistance effect which leads to a wavelength shift of the optical spectrum. This effect allows the optical emission to be used to detect magnetic field in the range 0-0.5 T.

Original language	English
Article number	205304
Pages (from-to)	2053041-2053046
Number of pages	6
Journal	Physical Review B-Condensed Matter
Volume	66
Issue number	20
State	Published - 15 Nov 2002

Cite this

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title = "Optical detection of magnetic fields using giant magnetoresistance in undoped coupled quantum wells",

abstract = "We show that undoped coupled quantum well structures of GaAs and InGaAs have a magnetoresistance effect which leads to a wavelength shift of the optical spectrum. This effect allows the optical emission to be used to detect magnetic field in the range 0-0.5 T.",

author = "S. Denev and V. Negoita and Snoke, \{D. W.\} and B. Laikhtman and K. Eberl and L. Pfeiffer",

year = "2002",

month = nov,

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language = "אנגלית",

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T1 - Optical detection of magnetic fields using giant magnetoresistance in undoped coupled quantum wells

AU - Denev, S.

AU - Negoita, V.

AU - Snoke, D. W.

AU - Laikhtman, B.

AU - Eberl, K.

AU - Pfeiffer, L.

PY - 2002/11/15

Y1 - 2002/11/15

N2 - We show that undoped coupled quantum well structures of GaAs and InGaAs have a magnetoresistance effect which leads to a wavelength shift of the optical spectrum. This effect allows the optical emission to be used to detect magnetic field in the range 0-0.5 T.

AB - We show that undoped coupled quantum well structures of GaAs and InGaAs have a magnetoresistance effect which leads to a wavelength shift of the optical spectrum. This effect allows the optical emission to be used to detect magnetic field in the range 0-0.5 T.

UR - https://www.scopus.com/pages/publications/4244049584

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AN - SCOPUS:4244049584

SN - 0163-1829

VL - 66

SP - 2053041

EP - 2053046

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

IS - 20

M1 - 205304

ER -

Optical detection of magnetic fields using giant magnetoresistance in undoped coupled quantum wells

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