Optical Multilevel Spin Bit Device Using Chiral Quantum Dots

H. Al-Bustami; B. P. Bloom; Amir Ziv; S. Goldring; S. Yochelis; R. Naaman; D. H. Waldeck; Y. Paltiel

doi:10.1021/acs.nanolett.0c03445

Optical Multilevel Spin Bit Device Using Chiral Quantum Dots

H. Al-Bustami, B. P. Bloom, Amir Ziv, S. Goldring, S. Yochelis, R. Naaman^*, D. H. Waldeck^*, Y. Paltiel^*

^*Corresponding author for this work

Department of Applied Physics

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

The technological advancement of data storage is reliant upon the continuous development of faster and denser memory with low power consumption. Recent progress in flash memory has focused on increasing the number of bits per cell to increase information density. In this work an optical multilevel spin bit, based on the chiral induced spin selectivity (CISS) effect, is developed using nanometer sized chiral quantum dots. A double quantum dot architecture is adsorbed on the active area of a Ni based Hall sensor and a nine-state readout is achieved.

Original language	English
Pages (from-to)	8675-8681
Number of pages	7
Journal	Nano Letters
Volume	20
Issue number	12
DOIs	https://doi.org/10.1021/acs.nanolett.0c03445
State	Published - 9 Dec 2020

Bibliographical note

Publisher Copyright:
© 2020 American Chemical Society.

Keywords

chiral induced spin selectivity (CISS)
multistate memory
optical nano device
spin transfer
spintronics

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10.1021/acs.nanolett.0c03445

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abstract = "The technological advancement of data storage is reliant upon the continuous development of faster and denser memory with low power consumption. Recent progress in flash memory has focused on increasing the number of bits per cell to increase information density. In this work an optical multilevel spin bit, based on the chiral induced spin selectivity (CISS) effect, is developed using nanometer sized chiral quantum dots. A double quantum dot architecture is adsorbed on the active area of a Ni based Hall sensor and a nine-state readout is achieved.",

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AU - Goldring, S.

AU - Yochelis, S.

AU - Naaman, R.

AU - Waldeck, D. H.

AU - Paltiel, Y.

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AB - The technological advancement of data storage is reliant upon the continuous development of faster and denser memory with low power consumption. Recent progress in flash memory has focused on increasing the number of bits per cell to increase information density. In this work an optical multilevel spin bit, based on the chiral induced spin selectivity (CISS) effect, is developed using nanometer sized chiral quantum dots. A double quantum dot architecture is adsorbed on the active area of a Ni based Hall sensor and a nine-state readout is achieved.

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KW - spin transfer

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Optical Multilevel Spin Bit Device Using Chiral Quantum Dots

Abstract

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Keywords

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