Optical Multilevel Spin Bit Device Using Chiral Quantum Dots

H. Al-Bustami, B. P. Bloom, Amir Ziv, S. Goldring, S. Yochelis, R. Naaman*, D. H. Waldeck*, Y. Paltiel*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

The technological advancement of data storage is reliant upon the continuous development of faster and denser memory with low power consumption. Recent progress in flash memory has focused on increasing the number of bits per cell to increase information density. In this work an optical multilevel spin bit, based on the chiral induced spin selectivity (CISS) effect, is developed using nanometer sized chiral quantum dots. A double quantum dot architecture is adsorbed on the active area of a Ni based Hall sensor and a nine-state readout is achieved.

Original languageAmerican English
Pages (from-to)8675-8681
Number of pages7
JournalNano Letters
Volume20
Issue number12
DOIs
StatePublished - 9 Dec 2020

Bibliographical note

Publisher Copyright:
© 2020 American Chemical Society.

Keywords

  • chiral induced spin selectivity (CISS)
  • multistate memory
  • optical nano device
  • spin transfer
  • spintronics

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