Optical properties of "pure" CdS and metal-insulator-semiconductor structures on CdS at electrical operation

M. A. Jakobson; V. D. Kagan; R. P. Seisyan; E. V. Goncharova

doi:10.1016/0022-0248(94)90811-7

Optical properties of "pure" CdS and metal-insulator-semiconductor structures on CdS at electrical operation

M. A. Jakobson^*
, V. D. Kagan
, R. P. Seisyan
, E. V. Goncharova

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The quadratic Strak effect on the A_F, A_L and I₃ exciton lines was observed at 1.8 K in the absorption spectra for MIS structures with CdS. Impact ionization of free and bound excitons by free carriers in an electric field in CdS crystals with ohmic contact were investigated in the spectrum of luminescence. A theoretical analysis of the results has made it possible to identify the mechanisms of relaxation of high-energy electrons predominating in CdS at low temperatures.

Original language	English
Pages (from-to)	225-230
Number of pages	6
Journal	Journal of Crystal Growth
Volume	138
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(94)90811-7
State	Published - 2 Apr 1994
Externally published	Yes

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10.1016/0022-0248(94)90811-7

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title = "Optical properties of {"}pure{"} CdS and metal-insulator-semiconductor structures on CdS at electrical operation",

abstract = "The quadratic Strak effect on the AF, AL and I3 exciton lines was observed at 1.8 K in the absorption spectra for MIS structures with CdS. Impact ionization of free and bound excitons by free carriers in an electric field in CdS crystals with ohmic contact were investigated in the spectrum of luminescence. A theoretical analysis of the results has made it possible to identify the mechanisms of relaxation of high-energy electrons predominating in CdS at low temperatures.",

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AU - Jakobson, M. A.

AU - Kagan, V. D.

AU - Seisyan, R. P.

AU - Goncharova, E. V.

PY - 1994/4/2

Y1 - 1994/4/2

N2 - The quadratic Strak effect on the AF, AL and I3 exciton lines was observed at 1.8 K in the absorption spectra for MIS structures with CdS. Impact ionization of free and bound excitons by free carriers in an electric field in CdS crystals with ohmic contact were investigated in the spectrum of luminescence. A theoretical analysis of the results has made it possible to identify the mechanisms of relaxation of high-energy electrons predominating in CdS at low temperatures.

AB - The quadratic Strak effect on the AF, AL and I3 exciton lines was observed at 1.8 K in the absorption spectra for MIS structures with CdS. Impact ionization of free and bound excitons by free carriers in an electric field in CdS crystals with ohmic contact were investigated in the spectrum of luminescence. A theoretical analysis of the results has made it possible to identify the mechanisms of relaxation of high-energy electrons predominating in CdS at low temperatures.

UR - https://www.scopus.com/pages/publications/0028760804

U2 - 10.1016/0022-0248(94)90811-7

DO - 10.1016/0022-0248(94)90811-7

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SN - 0022-0248

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ER -

Optical properties of "pure" CdS and metal-insulator-semiconductor structures on CdS at electrical operation

Abstract

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