Optically readable resistive random access memory in silicon plasmonics platform

A. Emboras; I. Goykhman; B. Desiatov; N. Mazurski; L. Stern; J. Shappir; U. Levy

Optically readable resistive random access memory in silicon plasmonics platform

A. Emboras, I. Goykhman, B. Desiatov, N. Mazurski, L. Stern, J. Shappir, U. Levy

Research output: Contribution to conference › Paper › peer-review

Abstract

We experimentally demonstrate resistive random access memory device integrated with a silicon plasmonic waveguide, and relying on the formation of nanoscale metallic needles. The measured electrical and optical response show distinct bistability with well-defined hysteresis.

Original language	English
State	Published - 2014
Event	2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States Duration: 8 Jun 2014 → 13 Jun 2014

Conference

Conference	2014 Conference on Lasers and Electro-Optics, CLEO 2014
Country/Territory	United States
City	San Jose
Period	8/06/14 → 13/06/14

Cite this

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title = "Optically readable resistive random access memory in silicon plasmonics platform",

abstract = "We experimentally demonstrate resistive random access memory device integrated with a silicon plasmonic waveguide, and relying on the formation of nanoscale metallic needles. The measured electrical and optical response show distinct bistability with well-defined hysteresis.",

author = "A. Emboras and I. Goykhman and B. Desiatov and N. Mazurski and L. Stern and J. Shappir and U. Levy",

year = "2014",

language = "אנגלית",

note = "2014 Conference on Lasers and Electro-Optics, CLEO 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

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T1 - Optically readable resistive random access memory in silicon plasmonics platform

AU - Emboras, A.

AU - Goykhman, I.

AU - Desiatov, B.

AU - Mazurski, N.

AU - Stern, L.

AU - Shappir, J.

AU - Levy, U.

PY - 2014

Y1 - 2014

N2 - We experimentally demonstrate resistive random access memory device integrated with a silicon plasmonic waveguide, and relying on the formation of nanoscale metallic needles. The measured electrical and optical response show distinct bistability with well-defined hysteresis.

AB - We experimentally demonstrate resistive random access memory device integrated with a silicon plasmonic waveguide, and relying on the formation of nanoscale metallic needles. The measured electrical and optical response show distinct bistability with well-defined hysteresis.

UR - https://www.scopus.com/pages/publications/84944704433

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AN - SCOPUS:84944704433

T2 - 2014 Conference on Lasers and Electro-Optics, CLEO 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Optically readable resistive random access memory in silicon plasmonics platform

Abstract

Conference

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