Optimization and Experimental Demonstration of Plasmonic Enhanced Internal Photoemission Silicon Schottky Detectors in the Mid-IR

Meir Grajower, Boris Desiatov, Noa Mazurski, Joseph Shappir, Jacob B. Khurgin, Uriel Levy*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

Plasmonic enhanced Schottky photodetectors operating on the basis of the internal photoemission process are becoming an alternative for the more conventional photodetectors based on interband transitions for light detection in the infrared. This is because such detectors typically consist of silicon and CMOS compatible metals, thus, allowing low cost and large scale fabrication. Most of the reports so far were focused on measuring the responsivity of the device. Here, we provide a detailed analysis for the optimization of internal photoemission based devices in terms of figure of merits such as signal-to-noise ratio (SNR) and noise equivalent power (NEP). Following the analysis, we experimentally demonstrate the operation of pyramidally shaped, silicon-based, internal photoemission detectors in the mid-infrared. The measured devices are capable of photodetection at wavelengths up to ∼2.5 μm. This paves the way for the use of plasmonic enhanced silicon photodetectors for a broad range of applications including mid-IR circuitry and biochemical sensing.

Original languageAmerican English
Pages (from-to)1015-1020
Number of pages6
JournalACS Photonics
Volume4
Issue number4
DOIs
StatePublished - 19 Apr 2017

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.

Keywords

  • Schotky detector
  • mid-IR
  • plasmonics

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