Optimization of efficiency-loss figure of merit in carrier-depletion silicon Mach-Zehnder optical modulator

Ilya Goykhman, Boris Desiatov, Shalva Ben-Ezra, Joseph Shappir, Uriel Levy

Research output: Contribution to journalArticlepeer-review

45 Scopus citations

Abstract

In this paper we study the optimization of interleaved Mach-Zehnder silicon carrier depletion electro-optic modulator. Following the simulation results we demonstrate a phase shifter with the lowest figure of merit (modulation efficiency multiplied by the loss per unit length) 6.7VdB. This result was achieved by reducing the junction width to 200 nm along the phase-shifter and optimizing the doping levels of the PN junction for operation in nearly fully depleted mode. The demonstrated low FOM is the result of both low V πL of ~0.78 Vcm (at reverse bias of 1V), and low free carrier loss (~6.6 dB/cm for zero bias). Our simulation results indicate that additional improvement in performance may be achieved by further reducing the junction width followed by increasing the doping levels.

Original languageAmerican English
Pages (from-to)19518-19529
Number of pages12
JournalOptics Express
Volume21
Issue number17
DOIs
StatePublished - 26 Aug 2013

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