Abstract
It is found that irradiation of SiO2 layers containing Si nanocrystals with high-energy heavy ions induces profound structural modifications-specifically, the formation of vertically ordered arrays of nanocrystals along the ion tracks. This effect results in substantial changes in the electrical properties (the conductivity and capacitance-voltage characteristics) and optical (photoluminescence) properties of the layers containing nanocrystals.
Original language | English |
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Pages (from-to) | 482-487 |
Number of pages | 6 |
Journal | Semiconductors |
Volume | 44 |
Issue number | 4 |
DOIs | |
State | Published - 2010 |