Ordered arrays of Si nanocrystals in SiO2: Structural, optical, and electronic properties

I. V. Antonova; V. A. Skuratov; J. Jedrzejewski; I. Balberg

doi:10.1134/S1063782610040135

Ordered arrays of Si nanocrystals in SiO₂: Structural, optical, and electronic properties

I. V. Antonova, V. A. Skuratov, J. Jedrzejewski, I. Balberg

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

It is found that irradiation of SiO₂ layers containing Si nanocrystals with high-energy heavy ions induces profound structural modifications-specifically, the formation of vertically ordered arrays of nanocrystals along the ion tracks. This effect results in substantial changes in the electrical properties (the conductivity and capacitance-voltage characteristics) and optical (photoluminescence) properties of the layers containing nanocrystals.

Original language	English
Pages (from-to)	482-487
Number of pages	6
Journal	Semiconductors
Volume	44
Issue number	4
DOIs	https://doi.org/10.1134/S1063782610040135
State	Published - 2010

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title = "Ordered arrays of Si nanocrystals in SiO2: Structural, optical, and electronic properties",

abstract = "It is found that irradiation of SiO2 layers containing Si nanocrystals with high-energy heavy ions induces profound structural modifications-specifically, the formation of vertically ordered arrays of nanocrystals along the ion tracks. This effect results in substantial changes in the electrical properties (the conductivity and capacitance-voltage characteristics) and optical (photoluminescence) properties of the layers containing nanocrystals.",

author = "Antonova, \{I. V.\} and Skuratov, \{V. A.\} and J. Jedrzejewski and I. Balberg",

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AU - Antonova, I. V.

AU - Skuratov, V. A.

AU - Jedrzejewski, J.

AU - Balberg, I.

PY - 2010

Y1 - 2010

N2 - It is found that irradiation of SiO2 layers containing Si nanocrystals with high-energy heavy ions induces profound structural modifications-specifically, the formation of vertically ordered arrays of nanocrystals along the ion tracks. This effect results in substantial changes in the electrical properties (the conductivity and capacitance-voltage characteristics) and optical (photoluminescence) properties of the layers containing nanocrystals.

AB - It is found that irradiation of SiO2 layers containing Si nanocrystals with high-energy heavy ions induces profound structural modifications-specifically, the formation of vertically ordered arrays of nanocrystals along the ion tracks. This effect results in substantial changes in the electrical properties (the conductivity and capacitance-voltage characteristics) and optical (photoluminescence) properties of the layers containing nanocrystals.

UR - https://www.scopus.com/pages/publications/77951718939

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SN - 1063-7826

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EP - 487

JO - Semiconductors

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IS - 4

ER -

Ordered arrays of Si nanocrystals in SiO₂: Structural, optical, and electronic properties

Abstract

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