Oscillating Magnetoresistance in Graphene p-n Junctions at Intermediate Magnetic Fields

Hiske Overweg; Hannah Eggimann; Ming Hao Liu; Anastasia Varlet; Marius Eich; Pauline Simonet; Yongjin Lee; Kenji Watanabe; Takashi Taniguchi; Klaus Richter; Vladimir I. Fal’ko; Klaus Ensslin; Thomas Ihn

doi:10.1021/acs.nanolett.6b05318

Oscillating Magnetoresistance in Graphene p-n Junctions at Intermediate Magnetic Fields

Hiske Overweg^*
, Hannah Eggimann
, Ming Hao Liu
, Anastasia Varlet
, Marius Eich
, Pauline Simonet
, Yongjin Lee
, Kenji Watanabe
, Takashi Taniguchi
, Klaus Richter
, Vladimir I. Fal’ko
, Klaus Ensslin
, Thomas Ihn

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p-regions.

Original language	English
Pages (from-to)	2852-2857
Number of pages	6
Journal	Nano Letters
Volume	17
Issue number	5
DOIs	https://doi.org/10.1021/acs.nanolett.6b05318
State	Published - 10 May 2017
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.

Keywords

Graphene
ballistic transport
magnetoresistance
p−n junction

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10.1021/acs.nanolett.6b05318

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@article{4175a7da49b443f0951754a8380f7b76,

title = "Oscillating Magnetoresistance in Graphene p-n Junctions at Intermediate Magnetic Fields",

abstract = "We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p-regions.",

keywords = "Graphene, ballistic transport, magnetoresistance, p−n junction",

author = "Hiske Overweg and Hannah Eggimann and Liu, \{Ming Hao\} and Anastasia Varlet and Marius Eich and Pauline Simonet and Yongjin Lee and Kenji Watanabe and Takashi Taniguchi and Klaus Richter and Fal{\textquoteright}ko, \{Vladimir I.\} and Klaus Ensslin and Thomas Ihn",

note = "Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",

year = "2017",

month = may,

day = "10",

doi = "10.1021/acs.nanolett.6b05318",

language = "אנגלית",

volume = "17",

pages = "2852--2857",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "5",

}

TY - JOUR

T1 - Oscillating Magnetoresistance in Graphene p-n Junctions at Intermediate Magnetic Fields

AU - Overweg, Hiske

AU - Eggimann, Hannah

AU - Liu, Ming Hao

AU - Varlet, Anastasia

AU - Eich, Marius

AU - Simonet, Pauline

AU - Lee, Yongjin

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Richter, Klaus

AU - Fal’ko, Vladimir I.

AU - Ensslin, Klaus

AU - Ihn, Thomas

PY - 2017/5/10

Y1 - 2017/5/10

N2 - We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p-regions.

AB - We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p-regions.

KW - Graphene

KW - ballistic transport

KW - magnetoresistance

KW - p−n junction

UR - https://www.scopus.com/pages/publications/85019258771

U2 - 10.1021/acs.nanolett.6b05318

DO - 10.1021/acs.nanolett.6b05318

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

C2 - 28383919

AN - SCOPUS:85019258771

SN - 1530-6984

VL - 17

SP - 2852

EP - 2857

JO - Nano Letters

JF - Nano Letters

IS - 5

ER -

Oscillating Magnetoresistance in Graphene p-n Junctions at Intermediate Magnetic Fields

Abstract

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