Oxidation studies of hydrogenated amorphous silicon

S. R. Kelemen; Y. Goldstein; B. Abeles

doi:10.1016/0039-6028(82)90359-4

Oxidation studies of hydrogenated amorphous silicon

S. R. Kelemen^*, Y. Goldstein, B. Abeles

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Hydrogenated amorphous silicon surfaces, atomically clean and subsequently oxidized to up to 20 Å oxide thickness, were studied using AES and UPS. The oxidation was made in O₂ in the pressure range 10^-9 Torr to 5 atm and at 23 and 300°C. The oxidation rate at 23°C was found to be the same as that of crystalline silicon while at 300°C it was appreciably faster. Changes in the d N(E) dE AES Si LVV line shape near 80 eV upon oxidation could be correlated to changes in the silicon-oxygen bonding level observed in UPS. The detailed line shape of the AES Si LVV transition indicates that at 300°C a more homogeneous oxide is produced than at 23°C.

Original language	English
Pages (from-to)	488-500
Number of pages	13
Journal	Surface Science
Volume	116
Issue number	3
DOIs	https://doi.org/10.1016/0039-6028(82)90359-4
State	Published - 1 May 1982
Externally published	Yes

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title = "Oxidation studies of hydrogenated amorphous silicon",

abstract = "Hydrogenated amorphous silicon surfaces, atomically clean and subsequently oxidized to up to 20 {\AA} oxide thickness, were studied using AES and UPS. The oxidation was made in O2 in the pressure range 10-9 Torr to 5 atm and at 23 and 300°C. The oxidation rate at 23°C was found to be the same as that of crystalline silicon while at 300°C it was appreciably faster. Changes in the d N(E) dE AES Si LVV line shape near 80 eV upon oxidation could be correlated to changes in the silicon-oxygen bonding level observed in UPS. The detailed line shape of the AES Si LVV transition indicates that at 300°C a more homogeneous oxide is produced than at 23°C.",

author = "Kelemen, {S. R.} and Y. Goldstein and B. Abeles",

year = "1982",

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AU - Goldstein, Y.

AU - Abeles, B.

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N2 - Hydrogenated amorphous silicon surfaces, atomically clean and subsequently oxidized to up to 20 Å oxide thickness, were studied using AES and UPS. The oxidation was made in O2 in the pressure range 10-9 Torr to 5 atm and at 23 and 300°C. The oxidation rate at 23°C was found to be the same as that of crystalline silicon while at 300°C it was appreciably faster. Changes in the d N(E) dE AES Si LVV line shape near 80 eV upon oxidation could be correlated to changes in the silicon-oxygen bonding level observed in UPS. The detailed line shape of the AES Si LVV transition indicates that at 300°C a more homogeneous oxide is produced than at 23°C.

AB - Hydrogenated amorphous silicon surfaces, atomically clean and subsequently oxidized to up to 20 Å oxide thickness, were studied using AES and UPS. The oxidation was made in O2 in the pressure range 10-9 Torr to 5 atm and at 23 and 300°C. The oxidation rate at 23°C was found to be the same as that of crystalline silicon while at 300°C it was appreciably faster. Changes in the d N(E) dE AES Si LVV line shape near 80 eV upon oxidation could be correlated to changes in the silicon-oxygen bonding level observed in UPS. The detailed line shape of the AES Si LVV transition indicates that at 300°C a more homogeneous oxide is produced than at 23°C.

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Oxidation studies of hydrogenated amorphous silicon

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