Oxide trapping under spatially variable oxide electric field in the metal-oxide-silicon structure

E. Avni*, J. Shappir

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

An improved trapping-detrapping model is presented describing the effect of electron injection into the oxide of metal-oxide-silicon devices. The model covers both hot-electron and tunneling injection. It takes into account the spatial variation of the oxide electric field due to the trapped charge as well as the effect of this variation on the trapping-detrapping processes. The calculated results agree well with previously reported experimental results such as the field-dependent steady-state flatband voltage and the trapped charge centroid.

Original languageEnglish
Pages (from-to)463-465
Number of pages3
JournalApplied Physics Letters
Volume51
Issue number6
DOIs
StatePublished - 1987

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