Abstract
Thin oxynitride layers in the range 50-100 angstrom thickness were grown by the oxidation of a thermally nitrided silicon surface. The films were chemically investigated by Auger analysis and chemical etching measurements. Independent measurements of the surface state density and surface generation velocity show that interface characteristics similar to those of standard oxides are achieved by adequate processing. Mobility and trapping effects were investigated in fully procesed polysilicon gate n-channel transistors. While the mobility values are comparable to those obtained in standard oxide devices, the oxynitride layers show a significantly improved stability against charge injection.
Original language | English |
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Pages (from-to) | 161-164 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting |
DOIs | |
State | Published - 1984 |