OXIDIZED SILICON NITRIDE FILMS IN THIN INSULATOR MIS STRUCTURES.

A. Faigon*, J. Shappir

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

Thin oxynitride layers in the range 50-100 angstrom thickness were grown by the oxidation of a thermally nitrided silicon surface. The films were chemically investigated by Auger analysis and chemical etching measurements. Independent measurements of the surface state density and surface generation velocity show that interface characteristics similar to those of standard oxides are achieved by adequate processing. Mobility and trapping effects were investigated in fully procesed polysilicon gate n-channel transistors. While the mobility values are comparable to those obtained in standard oxide devices, the oxynitride layers show a significantly improved stability against charge injection.

Original languageEnglish
Pages (from-to)161-164
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1984

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