TY - JOUR
T1 - p-Channel MOS Transistor in Indium Antimonide
AU - Shappir, J.
AU - Margalit, S.
AU - Kidron, I.
PY - 1975/10
Y1 - 1975/10
N2 - A p-channel MOS transistor in InSb single crystal, operating at 77 K, is described. The source and drain are defined by etching a mesa structure in a cadmium diffused p layer into a tellurium-doped InSb substrate. The gate is formed by evaporation of chromium gold on top of a layer of SiO2, deposited at 215°C. The MOS transistor is characterized by a threshold voltage of. - 3V and an effective hole mobility of 330 cm2- V-l·S-l.
AB - A p-channel MOS transistor in InSb single crystal, operating at 77 K, is described. The source and drain are defined by etching a mesa structure in a cadmium diffused p layer into a tellurium-doped InSb substrate. The gate is formed by evaporation of chromium gold on top of a layer of SiO2, deposited at 215°C. The MOS transistor is characterized by a threshold voltage of. - 3V and an effective hole mobility of 330 cm2- V-l·S-l.
UR - http://www.scopus.com/inward/record.url?scp=0016564719&partnerID=8YFLogxK
U2 - 10.1109/T-ED.1975.18249
DO - 10.1109/T-ED.1975.18249
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AN - SCOPUS:0016564719
SN - 0018-9383
VL - 22
SP - 960
EP - 961
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 10
ER -