p-Channel MOS Transistor in Indium Antimonide

J. Shappir, S. Margalit, I. Kidron

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

A p-channel MOS transistor in InSb single crystal, operating at 77 K, is described. The source and drain are defined by etching a mesa structure in a cadmium diffused p layer into a tellurium-doped InSb substrate. The gate is formed by evaporation of chromium gold on top of a layer of SiO2, deposited at 215°C. The MOS transistor is characterized by a threshold voltage of. - 3V and an effective hole mobility of 330 cm2- V-l·S-l.

Original languageEnglish
Pages (from-to)960-961
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume22
Issue number10
DOIs
StatePublished - Oct 1975
Externally publishedYes

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