p-Channel MOS Transistor in Indium Antimonide

J. Shappir; S. Margalit; I. Kidron

doi:10.1109/T-ED.1975.18249

p-Channel MOS Transistor in Indium Antimonide

J. Shappir
, S. Margalit
, I. Kidron

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

A p-channel MOS transistor in InSb single crystal, operating at 77 K, is described. The source and drain are defined by etching a mesa structure in a cadmium diffused p layer into a tellurium-doped InSb substrate. The gate is formed by evaporation of chromium gold on top of a layer of SiO2, deposited at 215°C. The MOS transistor is characterized by a threshold voltage of. - 3V and an effective hole mobility of 330 cm2- V-l·S-l.

Original language	English
Pages (from-to)	960-961
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	22
Issue number	10
DOIs	https://doi.org/10.1109/T-ED.1975.18249
State	Published - Oct 1975
Externally published	Yes

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10.1109/T-ED.1975.18249

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title = "p-Channel MOS Transistor in Indium Antimonide",

abstract = "A p-channel MOS transistor in InSb single crystal, operating at 77 K, is described. The source and drain are defined by etching a mesa structure in a cadmium diffused p layer into a tellurium-doped InSb substrate. The gate is formed by evaporation of chromium gold on top of a layer of SiO2, deposited at 215°C. The MOS transistor is characterized by a threshold voltage of. - 3V and an effective hole mobility of 330 cm2- V-l·S-l.",

author = "J. Shappir and S. Margalit and I. Kidron",

year = "1975",

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N2 - A p-channel MOS transistor in InSb single crystal, operating at 77 K, is described. The source and drain are defined by etching a mesa structure in a cadmium diffused p layer into a tellurium-doped InSb substrate. The gate is formed by evaporation of chromium gold on top of a layer of SiO2, deposited at 215°C. The MOS transistor is characterized by a threshold voltage of. - 3V and an effective hole mobility of 330 cm2- V-l·S-l.

AB - A p-channel MOS transistor in InSb single crystal, operating at 77 K, is described. The source and drain are defined by etching a mesa structure in a cadmium diffused p layer into a tellurium-doped InSb substrate. The gate is formed by evaporation of chromium gold on top of a layer of SiO2, deposited at 215°C. The MOS transistor is characterized by a threshold voltage of. - 3V and an effective hole mobility of 330 cm2- V-l·S-l.

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p-Channel MOS Transistor in Indium Antimonide

Abstract

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