Peculiarities of Raman spectra from porous silicon

N. E. Korsunskaya; M. K. Sheinkman; M. Ya Valakh; T. V. Torchinskaya; L. Yu Khomenkova; V. A. Yukhimchuk; B. M. Bulakh; M. K. Dzhumaev; A. Many; Y. Goldstein; E. Savir

doi:10.1109/ASDAM.2000.889515

Peculiarities of Raman spectra from porous silicon

N. E. Korsunskaya, M. K. Sheinkman, M. Ya Valakh, T. V. Torchinskaya, L. Yu Khomenkova, V. A. Yukhimchuk, B. M. Bulakh, M. K. Dzhumaev, A. Many, Y. Goldstein, E. Savir

Racah Institute of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The enhancement of the Raman intensity from porous layer compared to the signal from the silicon substrate was observed. It is assumed that this phenomenon is due to the specific form of pores that leads to the optical effect of focusing of scattered light near the bottom of the macropores. It was shown that peak position and shape of Raman line depend on the nanostructure of pore bottom.

Original language	English
Title of host publication	ASDAM 2000 - Conference Proceedings
Subtitle of host publication	3rd International EuroConference on Advanced Semiconductor Devices and Microsystems
Editors	Jan Kuzmik, Jozef Osvald, Stefan Hascik, Juraj Breza
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	339-342
Number of pages	4
ISBN (Electronic)	0780359399, 9780780359390
DOIs	https://doi.org/10.1109/ASDAM.2000.889515
State	Published - 2000
Event	3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003 - Smolenice, Slovakia Duration: 16 Oct 2000 → 18 Oct 2000

Publication series

Name	ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems

Conference

Conference	3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003
Country/Territory	Slovakia
City	Smolenice
Period	16/10/00 → 18/10/00

Bibliographical note

Publisher Copyright:
© 2000 IEEE.

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10.1109/ASDAM.2000.889515

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Korsunskaya, N. E., Sheinkman, M. K., Valakh, M. Y., Torchinskaya, T. V., Khomenkova, L. Y., Yukhimchuk, V. A., Bulakh, B. M., Dzhumaev, M. K., Many, A., Goldstein, Y., & Savir, E. (2000). Peculiarities of Raman spectra from porous silicon. In J. Kuzmik, J. Osvald, S. Hascik, & J. Breza (Eds.), ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems (pp. 339-342). Article 889515 (ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASDAM.2000.889515

Korsunskaya, N. E. ; Sheinkman, M. K. ; Valakh, M. Ya et al. / Peculiarities of Raman spectra from porous silicon. ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems. editor / Jan Kuzmik ; Jozef Osvald ; Stefan Hascik ; Juraj Breza. Institute of Electrical and Electronics Engineers Inc., 2000. pp. 339-342 (ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems).

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abstract = "The enhancement of the Raman intensity from porous layer compared to the signal from the silicon substrate was observed. It is assumed that this phenomenon is due to the specific form of pores that leads to the optical effect of focusing of scattered light near the bottom of the macropores. It was shown that peak position and shape of Raman line depend on the nanostructure of pore bottom.",

author = "Korsunskaya, {N. E.} and Sheinkman, {M. K.} and Valakh, {M. Ya} and Torchinskaya, {T. V.} and Khomenkova, {L. Yu} and Yukhimchuk, {V. A.} and Bulakh, {B. M.} and Dzhumaev, {M. K.} and A. Many and Y. Goldstein and E. Savir",

note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003 ; Conference date: 16-10-2000 Through 18-10-2000",

year = "2000",

doi = "10.1109/ASDAM.2000.889515",

language = "אנגלית",

series = "ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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editor = "Jan Kuzmik and Jozef Osvald and Stefan Hascik and Juraj Breza",

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Korsunskaya, NE, Sheinkman, MK, Valakh, MY, Torchinskaya, TV, Khomenkova, LY, Yukhimchuk, VA, Bulakh, BM, Dzhumaev, MK, Many, A, Goldstein, Y & Savir, E 2000, Peculiarities of Raman spectra from porous silicon. in J Kuzmik, J Osvald, S Hascik & J Breza (eds), ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems., 889515, ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, Institute of Electrical and Electronics Engineers Inc., pp. 339-342, 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003, Smolenice, Slovakia, 16/10/00. https://doi.org/10.1109/ASDAM.2000.889515

Peculiarities of Raman spectra from porous silicon. / Korsunskaya, N. E.; Sheinkman, M. K.; Valakh, M. Ya et al.
ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems. ed. / Jan Kuzmik; Jozef Osvald; Stefan Hascik; Juraj Breza. Institute of Electrical and Electronics Engineers Inc., 2000. p. 339-342 889515 (ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Korsunskaya NE, Sheinkman MK, Valakh MY, Torchinskaya TV, Khomenkova LY, Yukhimchuk VA et al. Peculiarities of Raman spectra from porous silicon. In Kuzmik J, Osvald J, Hascik S, Breza J, editors, ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems. Institute of Electrical and Electronics Engineers Inc. 2000. p. 339-342. 889515. (ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems). doi: 10.1109/ASDAM.2000.889515

Peculiarities of Raman spectra from porous silicon

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