TY - JOUR
T1 - Penetration depths of low-energy hydrogen-ion implantation on ZnO surfaces
AU - Yaron, G.
AU - Levy, J.
AU - Goldstein, Y.
AU - Many, A.
PY - 1986
Y1 - 1986
N2 - The penetration depths of protons in the (0001̄) face of ZnO produced by 100- and 400-eV hydrogen-ion bombardment are studied by three methods: calibrated argon-ion sputtering, calibrated etching, and space-charge capacitance measurements in the ZnO/electrolyte system. For the 100-eV implantation, the latter method provides unequivocal support to our previous conclusion that the protons, acting as fully ionized donors, penetrate only to a depth of 10-20 Å below the surface. The narrow space-charge layer so produced, having surface electron densities of up to 2×101 4 cm-2, constitutes a quantized, two-dimensional electron gas system. In the 400-eV implanted surface, the proton penetration depth is considerably larger. In this case an approximate depth profile could be derived from the combined measurements. It consists of a Gaussian distribution, peaked about 40 Å below the surface with a standard deviation of some 80 Å. However, some 10% of the implanted protons are found to penetrate much deeper, being distributed up to 1000 Å or more below the surface. For 100-eV implanted surfaces, similarly large penetration depths were observed, but the percentage of the deep lying protons is less than 1%. Such huge penetration depths arise most probably from a channeling mechanism.
AB - The penetration depths of protons in the (0001̄) face of ZnO produced by 100- and 400-eV hydrogen-ion bombardment are studied by three methods: calibrated argon-ion sputtering, calibrated etching, and space-charge capacitance measurements in the ZnO/electrolyte system. For the 100-eV implantation, the latter method provides unequivocal support to our previous conclusion that the protons, acting as fully ionized donors, penetrate only to a depth of 10-20 Å below the surface. The narrow space-charge layer so produced, having surface electron densities of up to 2×101 4 cm-2, constitutes a quantized, two-dimensional electron gas system. In the 400-eV implanted surface, the proton penetration depth is considerably larger. In this case an approximate depth profile could be derived from the combined measurements. It consists of a Gaussian distribution, peaked about 40 Å below the surface with a standard deviation of some 80 Å. However, some 10% of the implanted protons are found to penetrate much deeper, being distributed up to 1000 Å or more below the surface. For 100-eV implanted surfaces, similarly large penetration depths were observed, but the percentage of the deep lying protons is less than 1%. Such huge penetration depths arise most probably from a channeling mechanism.
UR - http://www.scopus.com/inward/record.url?scp=0022670019&partnerID=8YFLogxK
U2 - 10.1063/1.336510
DO - 10.1063/1.336510
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AN - SCOPUS:0022670019
SN - 0021-8979
VL - 59
SP - 1232
EP - 1237
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 4
ER -