Phase Shift Method of Carrier Lifetime Measurements in Semiconductors

E. Harnik; A. Many; N. B. Grover

doi:10.1063/1.1716029

Phase Shift Method of Carrier Lifetime Measurements in Semiconductors

E. Harnik, A. Many, N. B. Grover

Institute for Medical Research Israel-Canada (IMRIC)

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A direct reading instrument for lifetime measurements in semiconductors is described. It is based on the phase shift that exists between a sinusoidal modulation of carrier injection and the corresponding modulation of specimen conductance. Carrier injection is effected optically, a Kerr cell being used to modulate the intensity of the injecting light. The phase shift is determined by means of a compensating RC circuit which allows a direct reading of lifetime. The actual measurement is reduced to the setting of a variable resistor in such a way that an ellipse observed on the screen of a CRO degenerates into a straight line. The performance of the instrument is discussed for the case of a thin, rectangular filament illuminated on one of its large faces either homogeneously or in a narrow band.

Original language	American English
Pages (from-to)	889-891
Number of pages	3
Journal	Review of Scientific Instruments
Volume	29
Issue number	10
DOIs	https://doi.org/10.1063/1.1716029
State	Published - 1958

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title = "Phase Shift Method of Carrier Lifetime Measurements in Semiconductors",

abstract = "A direct reading instrument for lifetime measurements in semiconductors is described. It is based on the phase shift that exists between a sinusoidal modulation of carrier injection and the corresponding modulation of specimen conductance. Carrier injection is effected optically, a Kerr cell being used to modulate the intensity of the injecting light. The phase shift is determined by means of a compensating RC circuit which allows a direct reading of lifetime. The actual measurement is reduced to the setting of a variable resistor in such a way that an ellipse observed on the screen of a CRO degenerates into a straight line. The performance of the instrument is discussed for the case of a thin, rectangular filament illuminated on one of its large faces either homogeneously or in a narrow band.",

author = "E. Harnik and A. Many and Grover, \{N. B.\}",

year = "1958",

doi = "10.1063/1.1716029",

language = "American English",

volume = "29",

pages = "889--891",

journal = "Review of Scientific Instruments",

issn = "0034-6748",

publisher = "American Institute of Physics",

number = "10",

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TY - JOUR

T1 - Phase Shift Method of Carrier Lifetime Measurements in Semiconductors

AU - Harnik, E.

AU - Many, A.

AU - Grover, N. B.

PY - 1958

Y1 - 1958

N2 - A direct reading instrument for lifetime measurements in semiconductors is described. It is based on the phase shift that exists between a sinusoidal modulation of carrier injection and the corresponding modulation of specimen conductance. Carrier injection is effected optically, a Kerr cell being used to modulate the intensity of the injecting light. The phase shift is determined by means of a compensating RC circuit which allows a direct reading of lifetime. The actual measurement is reduced to the setting of a variable resistor in such a way that an ellipse observed on the screen of a CRO degenerates into a straight line. The performance of the instrument is discussed for the case of a thin, rectangular filament illuminated on one of its large faces either homogeneously or in a narrow band.

AB - A direct reading instrument for lifetime measurements in semiconductors is described. It is based on the phase shift that exists between a sinusoidal modulation of carrier injection and the corresponding modulation of specimen conductance. Carrier injection is effected optically, a Kerr cell being used to modulate the intensity of the injecting light. The phase shift is determined by means of a compensating RC circuit which allows a direct reading of lifetime. The actual measurement is reduced to the setting of a variable resistor in such a way that an ellipse observed on the screen of a CRO degenerates into a straight line. The performance of the instrument is discussed for the case of a thin, rectangular filament illuminated on one of its large faces either homogeneously or in a narrow band.

UR - https://www.scopus.com/pages/publications/36849116990

U2 - 10.1063/1.1716029

DO - 10.1063/1.1716029

M3 - Article

SN - 0034-6748

VL - 29

SP - 889

EP - 891

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

IS - 10

ER -

Phase Shift Method of Carrier Lifetime Measurements in Semiconductors

Abstract

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