Phonon drag thermopower in doped bismuth

V. D. Kagan; N. A. Red'ko; N. A. Rodionov; V. I. Pol'shin; O. V. Zotova

doi:10.1134/1.1788771

Phonon drag thermopower in doped bismuth

V. D. Kagan^*
, N. A. Red'ko
, N. A. Rodionov
, V. I. Pol'shin
, O. V. Zotova

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The low-temperature (2 < T < 80 K) thermopower in bismuth doped by tellurium, a donor impurity (0 < c ≤ 0.07 at. % Te), is dominated by the phonon component, which shifts to higher temperatures with increasing dopant concentration. The temperature and concentration dependences of the phonon thermopower of doped bismuth are satisfactorily described by the theory of phonon drag of electrons. The theory is developed for a strongly anisotropic electron spectrum and includes both direct and two-step phonon drag.

Original language	English
Pages (from-to)	1410-1419
Number of pages	10
Journal	Physics of the Solid State
Volume	46
Issue number	8
DOIs	https://doi.org/10.1134/1.1788771
State	Published - Aug 2004
Externally published	Yes

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title = "Phonon drag thermopower in doped bismuth",

abstract = "The low-temperature (2 < T < 80 K) thermopower in bismuth doped by tellurium, a donor impurity (0 < c ≤ 0.07 at. \% Te), is dominated by the phonon component, which shifts to higher temperatures with increasing dopant concentration. The temperature and concentration dependences of the phonon thermopower of doped bismuth are satisfactorily described by the theory of phonon drag of electrons. The theory is developed for a strongly anisotropic electron spectrum and includes both direct and two-step phonon drag.",

author = "Kagan, \{V. D.\} and Red'ko, \{N. A.\} and Rodionov, \{N. A.\} and Pol'shin, \{V. I.\} and Zotova, \{O. V.\}",

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AU - Kagan, V. D.

AU - Red'ko, N. A.

AU - Rodionov, N. A.

AU - Pol'shin, V. I.

AU - Zotova, O. V.

PY - 2004/8

Y1 - 2004/8

N2 - The low-temperature (2 < T < 80 K) thermopower in bismuth doped by tellurium, a donor impurity (0 < c ≤ 0.07 at. % Te), is dominated by the phonon component, which shifts to higher temperatures with increasing dopant concentration. The temperature and concentration dependences of the phonon thermopower of doped bismuth are satisfactorily described by the theory of phonon drag of electrons. The theory is developed for a strongly anisotropic electron spectrum and includes both direct and two-step phonon drag.

AB - The low-temperature (2 < T < 80 K) thermopower in bismuth doped by tellurium, a donor impurity (0 < c ≤ 0.07 at. % Te), is dominated by the phonon component, which shifts to higher temperatures with increasing dopant concentration. The temperature and concentration dependences of the phonon thermopower of doped bismuth are satisfactorily described by the theory of phonon drag of electrons. The theory is developed for a strongly anisotropic electron spectrum and includes both direct and two-step phonon drag.

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JO - Physics of the Solid State

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Phonon drag thermopower in doped bismuth

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