Phosphine oxide monolayers on SiO2 surfaces

Roie Yerushalmi*, Johnny C. Ho, Zhiyong Fan, Ali Javey

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Scopus citations

Abstract

(Figure Presented) Getting a grip: H-bond formation is shown to be the main mode of interaction for monolayer formation of phosphine oxides on SiO 2 substrates (see images), with covalent reaction involved to a lesser extent. In contrast to the situation with the more widely studied polar phosphonic acids, formation of these monolayers is self-limiting. The results may have important implications for many applications based on phosphine oxide monolayers.

Original languageAmerican English
Pages (from-to)4440-4442
Number of pages3
JournalAngewandte Chemie - International Edition
Volume47
Issue number23
DOIs
StatePublished - 26 May 2008
Externally publishedYes

Keywords

  • Atomic force microscopy
  • Hydrogen bonds
  • Monolayers
  • Phosphorus
  • Surface chemistry

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