Photoelectromagnetic effect in p-type HgCdTe layers grown by liquid phase epitaxy

D. Mordowicz*, A. Zemel, A. Zussman, D. Eger, Y. Goldstein

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Photo-electro-magnetic effect measurements of p-type Hg 1-xCdxTe layers are made at 80 K as a function of the magnetic field. A negative (anomalous) effect is observed. The basic properties of the minority carriers, mobility, lifetime, surface and interface recombination rates, are determined from best fitting of the experimental data to the theory.

Original languageEnglish
Pages (from-to)2239-2241
Number of pages3
JournalApplied Physics Letters
Volume51
Issue number26
DOIs
StatePublished - 1987

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