Photoelectromagnetic effect in p-type HgCdTe layers grown by liquid phase epitaxy

D. Mordowicz; A. Zemel; A. Zussman; D. Eger; Y. Goldstein

doi:10.1063/1.98952

Photoelectromagnetic effect in p-type HgCdTe layers grown by liquid phase epitaxy

D. Mordowicz^*
, A. Zemel
, A. Zussman
, D. Eger
, Y. Goldstein

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Photo-electro-magnetic effect measurements of p-type Hg _1-xCd_xTe layers are made at 80 K as a function of the magnetic field. A negative (anomalous) effect is observed. The basic properties of the minority carriers, mobility, lifetime, surface and interface recombination rates, are determined from best fitting of the experimental data to the theory.

Original language	English
Pages (from-to)	2239-2241
Number of pages	3
Journal	Applied Physics Letters
Volume	51
Issue number	26
DOIs	https://doi.org/10.1063/1.98952
State	Published - 1987

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title = "Photoelectromagnetic effect in p-type HgCdTe layers grown by liquid phase epitaxy",

abstract = "Photo-electro-magnetic effect measurements of p-type Hg 1-xCdxTe layers are made at 80 K as a function of the magnetic field. A negative (anomalous) effect is observed. The basic properties of the minority carriers, mobility, lifetime, surface and interface recombination rates, are determined from best fitting of the experimental data to the theory.",

author = "D. Mordowicz and A. Zemel and A. Zussman and D. Eger and Y. Goldstein",

year = "1987",

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AU - Mordowicz, D.

AU - Zemel, A.

AU - Zussman, A.

AU - Eger, D.

AU - Goldstein, Y.

PY - 1987

Y1 - 1987

N2 - Photo-electro-magnetic effect measurements of p-type Hg 1-xCdxTe layers are made at 80 K as a function of the magnetic field. A negative (anomalous) effect is observed. The basic properties of the minority carriers, mobility, lifetime, surface and interface recombination rates, are determined from best fitting of the experimental data to the theory.

AB - Photo-electro-magnetic effect measurements of p-type Hg 1-xCdxTe layers are made at 80 K as a function of the magnetic field. A negative (anomalous) effect is observed. The basic properties of the minority carriers, mobility, lifetime, surface and interface recombination rates, are determined from best fitting of the experimental data to the theory.

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JO - Applied Physics Letters

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Photoelectromagnetic effect in p-type HgCdTe layers grown by liquid phase epitaxy

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