Photoemission measurements of graded barrier in thin silicon oxynitride films

M. Emanuel*, A. Faigon, J. Shappir

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Photoemission measurements were performed on metal-insulator-silicon structures having thin thermal oxynitride films as the insulator. The results for the sample with the least oxidized nitride film, yield for the energy intervals from the insulator conduction band to the Fermi level of the aluminum and to the valence band of the silicon, the values of 3.3 and 3.6 eV, respectively. The affinity of the insulator as deduced from these values is larger at the silicon interface than at the aluminum interface by 0.8 eV, indicating that the film exhibits a graded energy barrier for electron injection from the electrodes.

Original languageEnglish
Pages (from-to)2285-2289
Number of pages5
JournalJournal of Applied Physics
Volume57
Issue number6
DOIs
StatePublished - 1985

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