Photoinduced desorption of Xe from porous Si following ultraviolet irradiation: Evidence for a selective and highly effective optical activity

Gil Toker, Micha Asscher*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Photoinduced desorption (PID) of Xe from porous silicon (PSi) following UV irradiation has been studied. A nonthermal, morphology, and wavelength dependent phenomenon with more than 3 orders of magnitude enhancement of Xe PID within pores over atoms adsorbed on top of flat surfaces has been recorded, displaying extraordinary large cross sections up to σXe/PSi= 2×10-15cm2. A long-lived, photoinduced, charge separated silicon-xenon complex is proposed as the precursor for this remarkable photodesorption process.

Original languageEnglish
Article number167402
JournalPhysical Review Letters
Volume107
Issue number16
DOIs
StatePublished - 11 Oct 2011

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