TY - JOUR
T1 - Photoinduced desorption of Xe from porous Si following ultraviolet irradiation
T2 - Evidence for a selective and highly effective optical activity
AU - Toker, Gil
AU - Asscher, Micha
PY - 2011/10/11
Y1 - 2011/10/11
N2 - Photoinduced desorption (PID) of Xe from porous silicon (PSi) following UV irradiation has been studied. A nonthermal, morphology, and wavelength dependent phenomenon with more than 3 orders of magnitude enhancement of Xe PID within pores over atoms adsorbed on top of flat surfaces has been recorded, displaying extraordinary large cross sections up to σXe/PSi= 2×10-15cm2. A long-lived, photoinduced, charge separated silicon-xenon complex is proposed as the precursor for this remarkable photodesorption process.
AB - Photoinduced desorption (PID) of Xe from porous silicon (PSi) following UV irradiation has been studied. A nonthermal, morphology, and wavelength dependent phenomenon with more than 3 orders of magnitude enhancement of Xe PID within pores over atoms adsorbed on top of flat surfaces has been recorded, displaying extraordinary large cross sections up to σXe/PSi= 2×10-15cm2. A long-lived, photoinduced, charge separated silicon-xenon complex is proposed as the precursor for this remarkable photodesorption process.
UR - http://www.scopus.com/inward/record.url?scp=80053978271&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.107.167402
DO - 10.1103/PhysRevLett.107.167402
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???
AN - SCOPUS:80053978271
SN - 0031-9007
VL - 107
JO - Physical Review Letters
JF - Physical Review Letters
IS - 16
M1 - 167402
ER -