TY - JOUR
T1 - Photoluminescence and its excitation mechanisms in Si wires and dots
AU - Torchynska, T. V.
AU - Aguilar-Hernandez, J.
AU - Diaz Cano, A. I.
AU - Becerril-Espinoza, F. G.
AU - Goldstein, Y.
AU - Many, A.
AU - Jedrzejewskii, J.
AU - Khomenkova, L. Yu
AU - Bulakh, B. M.
AU - Scherbina, L. V.
PY - 2003/5
Y1 - 2003/5
N2 - Investigations of photoluminescence, its temperature dependence, Raman scattering and IR absorption spectra were done for the study of the photoluminescence mechanism in porous silicon and Si enriched silicon oxide films. "Red" (1.6-1.7 eV) and "orange" (1.9-2.2 eV) photoluminescence bands are observed in both objects. Comparative investigations indicate than an oxide defect related mechanism is involved in the emission of PL bands in Si wires and silicon oxide films. Photoluminescence excitation mechanisms are discussed as well.
AB - Investigations of photoluminescence, its temperature dependence, Raman scattering and IR absorption spectra were done for the study of the photoluminescence mechanism in porous silicon and Si enriched silicon oxide films. "Red" (1.6-1.7 eV) and "orange" (1.9-2.2 eV) photoluminescence bands are observed in both objects. Comparative investigations indicate than an oxide defect related mechanism is involved in the emission of PL bands in Si wires and silicon oxide films. Photoluminescence excitation mechanisms are discussed as well.
UR - http://www.scopus.com/inward/record.url?scp=0038207870&partnerID=8YFLogxK
U2 - 10.1002/pssa.200306530
DO - 10.1002/pssa.200306530
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AN - SCOPUS:0038207870
SN - 0031-8965
VL - 197
SP - 382
EP - 387
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
IS - 2
T2 - Proceedings of The 3rd International Conference Porous Semiconductors - Sience and Technology
Y2 - 10 March 2002 through 15 March 2002
ER -