Photoluminescence and its excitation mechanisms in Si wires and dots

T. V. Torchynska; J. Aguilar-Hernandez; A. I. Diaz Cano; F. G. Becerril-Espinoza; Y. Goldstein; A. Many; J. Jedrzejewskii; L. Yu Khomenkova; B. M. Bulakh; L. V. Scherbina

doi:10.1002/pssa.200306530

Photoluminescence and its excitation mechanisms in Si wires and dots

T. V. Torchynska^*
, J. Aguilar-Hernandez
, A. I. Diaz Cano
, F. G. Becerril-Espinoza
, Y. Goldstein
, A. Many
, J. Jedrzejewskii
, L. Yu Khomenkova
, B. M. Bulakh
, L. V. Scherbina

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Investigations of photoluminescence, its temperature dependence, Raman scattering and IR absorption spectra were done for the study of the photoluminescence mechanism in porous silicon and Si enriched silicon oxide films. "Red" (1.6-1.7 eV) and "orange" (1.9-2.2 eV) photoluminescence bands are observed in both objects. Comparative investigations indicate than an oxide defect related mechanism is involved in the emission of PL bands in Si wires and silicon oxide films. Photoluminescence excitation mechanisms are discussed as well.

Original language	English
Pages (from-to)	382-387
Number of pages	6
Journal	Physica Status Solidi (A) Applied Research
Volume	197
Issue number	2
DOIs	https://doi.org/10.1002/pssa.200306530
State	Published - May 2003
Event	Proceedings of The 3rd International Conference Porous Semiconductors - Sience and Technology - Puerto de la Cruz, Spain Duration: 10 Mar 2002 → 15 Mar 2002

Access to Document

10.1002/pssa.200306530

Cite this

@article{3fbafbbc60e24aba903aaa7ef3b27961,

title = "Photoluminescence and its excitation mechanisms in Si wires and dots",

abstract = "Investigations of photoluminescence, its temperature dependence, Raman scattering and IR absorption spectra were done for the study of the photoluminescence mechanism in porous silicon and Si enriched silicon oxide films. {"}Red{"} (1.6-1.7 eV) and {"}orange{"} (1.9-2.2 eV) photoluminescence bands are observed in both objects. Comparative investigations indicate than an oxide defect related mechanism is involved in the emission of PL bands in Si wires and silicon oxide films. Photoluminescence excitation mechanisms are discussed as well.",

author = "Torchynska, \{T. V.\} and J. Aguilar-Hernandez and \{Diaz Cano\}, \{A. I.\} and Becerril-Espinoza, \{F. G.\} and Y. Goldstein and A. Many and J. Jedrzejewskii and Khomenkova, \{L. Yu\} and Bulakh, \{B. M.\} and Scherbina, \{L. V.\}",

year = "2003",

month = may,

doi = "10.1002/pssa.200306530",

language = "אנגלית",

volume = "197",

pages = "382--387",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "2",

note = "Proceedings of The 3rd International Conference Porous Semiconductors - Sience and Technology ; Conference date: 10-03-2002 Through 15-03-2002",

}

TY - JOUR

T1 - Photoluminescence and its excitation mechanisms in Si wires and dots

AU - Torchynska, T. V.

AU - Aguilar-Hernandez, J.

AU - Diaz Cano, A. I.

AU - Becerril-Espinoza, F. G.

AU - Goldstein, Y.

AU - Many, A.

AU - Jedrzejewskii, J.

AU - Khomenkova, L. Yu

AU - Bulakh, B. M.

AU - Scherbina, L. V.

PY - 2003/5

Y1 - 2003/5

N2 - Investigations of photoluminescence, its temperature dependence, Raman scattering and IR absorption spectra were done for the study of the photoluminescence mechanism in porous silicon and Si enriched silicon oxide films. "Red" (1.6-1.7 eV) and "orange" (1.9-2.2 eV) photoluminescence bands are observed in both objects. Comparative investigations indicate than an oxide defect related mechanism is involved in the emission of PL bands in Si wires and silicon oxide films. Photoluminescence excitation mechanisms are discussed as well.

AB - Investigations of photoluminescence, its temperature dependence, Raman scattering and IR absorption spectra were done for the study of the photoluminescence mechanism in porous silicon and Si enriched silicon oxide films. "Red" (1.6-1.7 eV) and "orange" (1.9-2.2 eV) photoluminescence bands are observed in both objects. Comparative investigations indicate than an oxide defect related mechanism is involved in the emission of PL bands in Si wires and silicon oxide films. Photoluminescence excitation mechanisms are discussed as well.

UR - https://www.scopus.com/pages/publications/0038207870

U2 - 10.1002/pssa.200306530

DO - 10.1002/pssa.200306530

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:0038207870

SN - 0031-8965

VL - 197

SP - 382

EP - 387

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 2

T2 - Proceedings of The 3rd International Conference Porous Semiconductors - Sience and Technology

Y2 - 10 March 2002 through 15 March 2002

ER -

Photoluminescence and its excitation mechanisms in Si wires and dots

Abstract

Access to Document

Other files and links

Fingerprint

Cite this