Photoluminescence of silicon oxide films enriched by Si or Ge

T. V. Torchynska; J. Aguilar-Hernandez; L. Schacht Hernández; Y. Goldstein; A. Many; J. Jedrzejewski; A. V. Kolobov

doi:10.1016/S0022-2313(02)00607-5

Photoluminescence of silicon oxide films enriched by Si or Ge

T. V. Torchynska, J. Aguilar-Hernandez, L. Schacht Hernández, Y. Goldstein^*, A. Many, J. Jedrzejewski, A. V. Kolobov

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

Photoluminescence (PL) and Raman spectra of silicon oxide films enriched by Si or Ge have been investigated before and after thermal annealing at 1150°C and 800°C, respectively. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence (or absence) of Si (Ge) quantum dots in silicon oxide films are analyzed. It is concluded that the PL spectrum of the oxide films enriched with Ge and at least the high-energy part of the spectrum of the films enriched with Si are due to defects in the silicon oxide films.

Original language	English
Pages (from-to)	557-561
Number of pages	5
Journal	Journal of Luminescence
Volume	102-103
Issue number	SPEC
DOIs	https://doi.org/10.1016/S0022-2313(02)00607-5
State	Published - May 2003
Event	Proceedings of the 2002 International Conference on Luminescence - Budapest, Hungary Duration: 24 Aug 2002 → 29 Aug 2002

Keywords

Nanocrystalline Ge
Nanocrystalline Si
Photoluminescence
Quantum confinement

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/S0022-2313(02)00607-5

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title = "Photoluminescence of silicon oxide films enriched by Si or Ge",

abstract = "Photoluminescence (PL) and Raman spectra of silicon oxide films enriched by Si or Ge have been investigated before and after thermal annealing at 1150°C and 800°C, respectively. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence (or absence) of Si (Ge) quantum dots in silicon oxide films are analyzed. It is concluded that the PL spectrum of the oxide films enriched with Ge and at least the high-energy part of the spectrum of the films enriched with Si are due to defects in the silicon oxide films.",

keywords = "Nanocrystalline Ge, Nanocrystalline Si, Photoluminescence, Quantum confinement",

author = "Torchynska, {T. V.} and J. Aguilar-Hernandez and Hern{\'a}ndez, {L. Schacht} and Y. Goldstein and A. Many and J. Jedrzejewski and Kolobov, {A. V.}",

year = "2003",

month = may,

doi = "10.1016/S0022-2313(02)00607-5",

language = "אנגלית",

volume = "102-103",

pages = "557--561",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier B.V.",

number = "SPEC",

note = "Proceedings of the 2002 International Conference on Luminescence ; Conference date: 24-08-2002 Through 29-08-2002",

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TY - JOUR

T1 - Photoluminescence of silicon oxide films enriched by Si or Ge

AU - Torchynska, T. V.

AU - Aguilar-Hernandez, J.

AU - Hernández, L. Schacht

AU - Goldstein, Y.

AU - Many, A.

AU - Jedrzejewski, J.

AU - Kolobov, A. V.

PY - 2003/5

Y1 - 2003/5

N2 - Photoluminescence (PL) and Raman spectra of silicon oxide films enriched by Si or Ge have been investigated before and after thermal annealing at 1150°C and 800°C, respectively. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence (or absence) of Si (Ge) quantum dots in silicon oxide films are analyzed. It is concluded that the PL spectrum of the oxide films enriched with Ge and at least the high-energy part of the spectrum of the films enriched with Si are due to defects in the silicon oxide films.

AB - Photoluminescence (PL) and Raman spectra of silicon oxide films enriched by Si or Ge have been investigated before and after thermal annealing at 1150°C and 800°C, respectively. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence (or absence) of Si (Ge) quantum dots in silicon oxide films are analyzed. It is concluded that the PL spectrum of the oxide films enriched with Ge and at least the high-energy part of the spectrum of the films enriched with Si are due to defects in the silicon oxide films.

KW - Nanocrystalline Ge

KW - Nanocrystalline Si

KW - Photoluminescence

KW - Quantum confinement

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SN - 0022-2313

VL - 102-103

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JO - Journal of Luminescence

JF - Journal of Luminescence

IS - SPEC

T2 - Proceedings of the 2002 International Conference on Luminescence

Y2 - 24 August 2002 through 29 August 2002

ER -

Photoluminescence of silicon oxide films enriched by Si or Ge

Abstract

Keywords

UN SDGs

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