Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals

Arzu Angi, Regina Sinelnikov, Al Meldrum, Jonathan G.C. Veinot, Isacc Balberg, Doron Azulay, Oded Millo, Bernhard Rieger*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


Optoelectronic properties of Si nanocrystals (SiNCs) were studied by combining scanning tunneling spectroscopy (STS) and optical measurements. The photoluminescence (PL) of phenylacetylene functionalized SiNCs red shifts relative to hexyl- and phenyl-capped counterparts, whereas the absorption spectra and the band gaps extracted from STS are similar for all surface groups. However, an in-gap state near the conduction band edge was detected by STS only for the phenylacetylene terminated SiNCs, which can account for the PL shift via relaxation across this state.

Original languageAmerican English
Pages (from-to)7849-7853
Number of pages5
Issue number15
StatePublished - 21 Apr 2016

Bibliographical note

Publisher Copyright:
© 2016 The Royal Society of Chemistry.


Dive into the research topics of 'Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals'. Together they form a unique fingerprint.

Cite this