Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals

Arzu Angi; Regina Sinelnikov; Al Meldrum; Jonathan G.C. Veinot; Isacc Balberg; Doron Azulay; Oded Millo; Bernhard Rieger

doi:10.1039/c6nr01435f

Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals

Arzu Angi, Regina Sinelnikov, Al Meldrum, Jonathan G.C. Veinot, Isacc Balberg, Doron Azulay, Oded Millo, Bernhard Rieger^*

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Optoelectronic properties of Si nanocrystals (SiNCs) were studied by combining scanning tunneling spectroscopy (STS) and optical measurements. The photoluminescence (PL) of phenylacetylene functionalized SiNCs red shifts relative to hexyl- and phenyl-capped counterparts, whereas the absorption spectra and the band gaps extracted from STS are similar for all surface groups. However, an in-gap state near the conduction band edge was detected by STS only for the phenylacetylene terminated SiNCs, which can account for the PL shift via relaxation across this state.

Original language	English
Pages (from-to)	7849-7853
Number of pages	5
Journal	Nanoscale
Volume	8
Issue number	15
DOIs	https://doi.org/10.1039/c6nr01435f
State	Published - 21 Apr 2016

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© 2016 The Royal Society of Chemistry.

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title = "Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals",

abstract = "Optoelectronic properties of Si nanocrystals (SiNCs) were studied by combining scanning tunneling spectroscopy (STS) and optical measurements. The photoluminescence (PL) of phenylacetylene functionalized SiNCs red shifts relative to hexyl- and phenyl-capped counterparts, whereas the absorption spectra and the band gaps extracted from STS are similar for all surface groups. However, an in-gap state near the conduction band edge was detected by STS only for the phenylacetylene terminated SiNCs, which can account for the PL shift via relaxation across this state.",

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AU - Angi, Arzu

AU - Sinelnikov, Regina

AU - Meldrum, Al

AU - Veinot, Jonathan G.C.

AU - Balberg, Isacc

AU - Azulay, Doron

AU - Millo, Oded

AU - Rieger, Bernhard

PY - 2016/4/21

Y1 - 2016/4/21

N2 - Optoelectronic properties of Si nanocrystals (SiNCs) were studied by combining scanning tunneling spectroscopy (STS) and optical measurements. The photoluminescence (PL) of phenylacetylene functionalized SiNCs red shifts relative to hexyl- and phenyl-capped counterparts, whereas the absorption spectra and the band gaps extracted from STS are similar for all surface groups. However, an in-gap state near the conduction band edge was detected by STS only for the phenylacetylene terminated SiNCs, which can account for the PL shift via relaxation across this state.

AB - Optoelectronic properties of Si nanocrystals (SiNCs) were studied by combining scanning tunneling spectroscopy (STS) and optical measurements. The photoluminescence (PL) of phenylacetylene functionalized SiNCs red shifts relative to hexyl- and phenyl-capped counterparts, whereas the absorption spectra and the band gaps extracted from STS are similar for all surface groups. However, an in-gap state near the conduction band edge was detected by STS only for the phenylacetylene terminated SiNCs, which can account for the PL shift via relaxation across this state.

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JO - Nanoscale

JF - Nanoscale

IS - 15

ER -

Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals

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