Phototransport properties of a-SiC:H alloys

G. Nery*, A. Ramirez, O. Resto, S. Z. Weisz, Y. Lubianiker, I. Balberg

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

We report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the interpretation of the corresponding light intensity exponents, indicates that neutral dangling bonds control the electrons' lifetime while another recombination center controls the holes' lifetime.

Original languageEnglish
Pages (from-to)583-588
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume377
DOIs
StatePublished - 1995
Externally publishedYes
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: 17 Apr 199521 Apr 1995

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