Abstract
We report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the interpretation of the corresponding light intensity exponents, indicates that neutral dangling bonds control the electrons' lifetime while another recombination center controls the holes' lifetime.
| Original language | English |
|---|---|
| Pages (from-to) | 583-588 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 377 |
| DOIs | |
| State | Published - 1995 |
| Externally published | Yes |
| Event | Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: 17 Apr 1995 → 21 Apr 1995 |
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