TY - JOUR
T1 - Polaritons in microcavities containing a two-dimensional electron gas
AU - Qarry, A.
AU - Rapaport, R.
AU - Ramon, G.
AU - Cohen, E.
AU - Ron, Arza
AU - Pfeiffer, L. N.
PY - 2003/10
Y1 - 2003/10
N2 - We review the spectroscopic and dynamic properties of cavity polaritons in a λ-wide GaAs/GaAlAs microcavity (MC) structure having a single GaAs/AlAs quantum well in which a variable density two-dimensional electron gas (2DEG) is photoexcited, with a density in the range 0 < ne < 5 × 1011 cm-2. The main observed effects that will be discussed here are: (a) photoexcitation of negatively charged polaritons. These polaritons result of the coupling of the MC photon and the negatively charged excitons. They appear at low temperatures (T < 25 K), in the range of low 2DEG densities (ne < 5 × 1010 cm-2), and their coupling strength increases as √ne. (b) The effect of electron-polariton scattering on the polariton spectral linewidth, its complex dependence on the detuning energy, and the electron-induced transition from strong to weak coupling regimes, as ne increases. (c) The efficient polariton transfer across the relaxation bottleneck in the lower branch induced by electron-polariton scattering, and the resulting non-linear dependence of the polariton photoluminescence intensity on ne.
AB - We review the spectroscopic and dynamic properties of cavity polaritons in a λ-wide GaAs/GaAlAs microcavity (MC) structure having a single GaAs/AlAs quantum well in which a variable density two-dimensional electron gas (2DEG) is photoexcited, with a density in the range 0 < ne < 5 × 1011 cm-2. The main observed effects that will be discussed here are: (a) photoexcitation of negatively charged polaritons. These polaritons result of the coupling of the MC photon and the negatively charged excitons. They appear at low temperatures (T < 25 K), in the range of low 2DEG densities (ne < 5 × 1010 cm-2), and their coupling strength increases as √ne. (b) The effect of electron-polariton scattering on the polariton spectral linewidth, its complex dependence on the detuning energy, and the electron-induced transition from strong to weak coupling regimes, as ne increases. (c) The efficient polariton transfer across the relaxation bottleneck in the lower branch induced by electron-polariton scattering, and the resulting non-linear dependence of the polariton photoluminescence intensity on ne.
UR - http://www.scopus.com/inward/record.url?scp=0142027775&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/18/10/307
DO - 10.1088/0268-1242/18/10/307
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AN - SCOPUS:0142027775
SN - 0268-1242
VL - 18
SP - S331-S338
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 10
ER -