Positron charge sensing using a double-gated graphene field effect transistor

Paz Or; T. R. Devidas; Takashi Taniguchi; Kenji Watanabe; Iris Sabo-Napadesky; Sharon May-Tal Beck; Guy Ron; Hadar Steinberg

doi:10.1063/5.0069481

Positron charge sensing using a double-gated graphene field effect transistor

Paz Or, T. R. Devidas, Takashi Taniguchi, Kenji Watanabe, Iris Sabo-Napadesky, Sharon May-Tal Beck, Guy Ron, Hadar Steinberg^*

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We utilize a high-mobility double-gated graphene field-effect transistor to measure the accumulated charge created by positron annihilation in its back-gate. The device consists of an exfoliated graphene flake stacked between two hexagonal boron nitride flakes placed on a 1 cm² substrate of 500 μm thick conducting p-doped Si capped by 285 nm-thick SiO₂. The device is placed in close proximity to a 780 kBq ²²Na positron source emitting a constant flux of positrons. During the measurement, positrons annihilate within the back-gate, kept floating using a low-capacitance relay. The accumulated positive charge capacitively couples to the graphene device and builds a positive voltage, detectable through a shift in the top-gate dependent graphene resistance characteristic. The shift in the position of the top-gate Dirac peak is then used for extracting the exact voltage buildup and quantitative evaluation of the accumulated charge. Reaching a positron current sensitivity of ∼1.2 fA/Hz, detected over 20 min, our results demonstrate the utility of two-dimensional layered materials as probes for charging dynamics of positrons in solids.

Original language	American English
Article number	015002
Journal	Review of Scientific Instruments
Volume	93
Issue number	1
DOIs	https://doi.org/10.1063/5.0069481
State	Published - 1 Jan 2022

Bibliographical note

Funding Information:
Devices for this study were fabricated at the Center for Nanoscience and Nanotechnology, the Hebrew University. Funding for this work was provided by the IAEC through Pazy Grant No. 328/20 and by Israel Science Foundation Grant No. 861/19. P.O. was supported by a fellowship by the Ministry of Science and Technology, Israel. T.R.D. acknowledges support from the Lady Davis Postdoctoral Fellowship program. K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan (Grant No. JPMXP0112101001) and JSPS KAKENHI (Grant Nos. JP19H05790 and JP20H00354).

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© 2022 Author(s).

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10.1063/5.0069481

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abstract = "We utilize a high-mobility double-gated graphene field-effect transistor to measure the accumulated charge created by positron annihilation in its back-gate. The device consists of an exfoliated graphene flake stacked between two hexagonal boron nitride flakes placed on a 1 cm2 substrate of 500 μm thick conducting p-doped Si capped by 285 nm-thick SiO2. The device is placed in close proximity to a 780 kBq 22Na positron source emitting a constant flux of positrons. During the measurement, positrons annihilate within the back-gate, kept floating using a low-capacitance relay. The accumulated positive charge capacitively couples to the graphene device and builds a positive voltage, detectable through a shift in the top-gate dependent graphene resistance characteristic. The shift in the position of the top-gate Dirac peak is then used for extracting the exact voltage buildup and quantitative evaluation of the accumulated charge. Reaching a positron current sensitivity of ∼1.2 fA/Hz, detected over 20 min, our results demonstrate the utility of two-dimensional layered materials as probes for charging dynamics of positrons in solids.",

author = "Paz Or and Devidas, {T. R.} and Takashi Taniguchi and Kenji Watanabe and Iris Sabo-Napadesky and {May-Tal Beck}, Sharon and Guy Ron and Hadar Steinberg",

note = "Funding Information: Devices for this study were fabricated at the Center for Nanoscience and Nanotechnology, the Hebrew University. Funding for this work was provided by the IAEC through Pazy Grant No. 328/20 and by Israel Science Foundation Grant No. 861/19. P.O. was supported by a fellowship by the Ministry of Science and Technology, Israel. T.R.D. acknowledges support from the Lady Davis Postdoctoral Fellowship program. K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan (Grant No. JPMXP0112101001) and JSPS KAKENHI (Grant Nos. JP19H05790 and JP20H00354). Publisher Copyright: {\textcopyright} 2022 Author(s).",

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AU - May-Tal Beck, Sharon

AU - Ron, Guy

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N2 - We utilize a high-mobility double-gated graphene field-effect transistor to measure the accumulated charge created by positron annihilation in its back-gate. The device consists of an exfoliated graphene flake stacked between two hexagonal boron nitride flakes placed on a 1 cm2 substrate of 500 μm thick conducting p-doped Si capped by 285 nm-thick SiO2. The device is placed in close proximity to a 780 kBq 22Na positron source emitting a constant flux of positrons. During the measurement, positrons annihilate within the back-gate, kept floating using a low-capacitance relay. The accumulated positive charge capacitively couples to the graphene device and builds a positive voltage, detectable through a shift in the top-gate dependent graphene resistance characteristic. The shift in the position of the top-gate Dirac peak is then used for extracting the exact voltage buildup and quantitative evaluation of the accumulated charge. Reaching a positron current sensitivity of ∼1.2 fA/Hz, detected over 20 min, our results demonstrate the utility of two-dimensional layered materials as probes for charging dynamics of positrons in solids.

AB - We utilize a high-mobility double-gated graphene field-effect transistor to measure the accumulated charge created by positron annihilation in its back-gate. The device consists of an exfoliated graphene flake stacked between two hexagonal boron nitride flakes placed on a 1 cm2 substrate of 500 μm thick conducting p-doped Si capped by 285 nm-thick SiO2. The device is placed in close proximity to a 780 kBq 22Na positron source emitting a constant flux of positrons. During the measurement, positrons annihilate within the back-gate, kept floating using a low-capacitance relay. The accumulated positive charge capacitively couples to the graphene device and builds a positive voltage, detectable through a shift in the top-gate dependent graphene resistance characteristic. The shift in the position of the top-gate Dirac peak is then used for extracting the exact voltage buildup and quantitative evaluation of the accumulated charge. Reaching a positron current sensitivity of ∼1.2 fA/Hz, detected over 20 min, our results demonstrate the utility of two-dimensional layered materials as probes for charging dynamics of positrons in solids.

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Positron charge sensing using a double-gated graphene field effect transistor

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