Potential application of tip-enhanced Raman spectroscopy (TERS) in semiconductor manufacturing

P. Y. Hung; Thomas E. O'Loughlin; Aaron Lewis; Rimma Dechter; Martin Samayoa; Sarbajit Banerjee; Erin L. Wood; Angela R. Hight Walker

doi:10.1117/12.2175623

Potential application of tip-enhanced Raman spectroscopy (TERS) in semiconductor manufacturing

P. Y. Hung
, Thomas E. O'Loughlin
, Aaron Lewis
, Rimma Dechter
, Martin Samayoa
, Sarbajit Banerjee
, Erin L. Wood
, Angela R. Hight Walker

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

Tip-enhanced Raman spectroscopy (TERS), with nanometer spatial resolution, has the capability to monitor chemical composition, strain, and activated dopants and is a promising metrology tool to aid the semiconductor R&D processes. This paper addresses the major challenges which limit the application of TERS from routine measurement: the lack of comparability, reproducibility, calibration, and standardization. To address these issues, we have developed a robust test structure and the ability to generate high-quality tips using a high volume manufacturing (HVM) approach. The qualifying data will be presented.

Original language	English
Title of host publication	Metrology, Inspection, and Process Control for Microlithography XXIX
Editors	Martha I. Sanchez, Jason P. Cain
Publisher	SPIE
ISBN (Electronic)	9781628415261
DOIs	https://doi.org/10.1117/12.2175623
State	Published - 2015
Externally published	Yes
Event	29th Conference on Metrology, Inspection, and Process Control for Microlithography - San Jose, United States Duration: 23 Feb 2015 → 26 Feb 2015

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9424
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	29th Conference on Metrology, Inspection, and Process Control for Microlithography
Country/Territory	United States
City	San Jose
Period	23/02/15 → 26/02/15

Bibliographical note

Publisher Copyright:
© 2015 SPIE.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

TERS
Tip enhanced Raman spectroscopy
defect metrology
strained Si

Access to Document

10.1117/12.2175623

Cite this

Hung, P. Y., O'Loughlin, T. E., Lewis, A., Dechter, R., Samayoa, M., Banerjee, S., Wood, E. L., & Hight Walker, A. R. (2015). Potential application of tip-enhanced Raman spectroscopy (TERS) in semiconductor manufacturing. In M. I. Sanchez, & J. P. Cain (Eds.), Metrology, Inspection, and Process Control for Microlithography XXIX Article 94241S (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9424). SPIE. https://doi.org/10.1117/12.2175623

@inproceedings{e308c2851c914e438a5e4117eff741d1,

title = "Potential application of tip-enhanced Raman spectroscopy (TERS) in semiconductor manufacturing",

abstract = "Tip-enhanced Raman spectroscopy (TERS), with nanometer spatial resolution, has the capability to monitor chemical composition, strain, and activated dopants and is a promising metrology tool to aid the semiconductor R\&D processes. This paper addresses the major challenges which limit the application of TERS from routine measurement: the lack of comparability, reproducibility, calibration, and standardization. To address these issues, we have developed a robust test structure and the ability to generate high-quality tips using a high volume manufacturing (HVM) approach. The qualifying data will be presented.",

keywords = "TERS, Tip enhanced Raman spectroscopy, defect metrology, strained Si",

author = "Hung, \{P. Y.\} and O'Loughlin, \{Thomas E.\} and Aaron Lewis and Rimma Dechter and Martin Samayoa and Sarbajit Banerjee and Wood, \{Erin L.\} and \{Hight Walker\}, \{Angela R.\}",

note = "Publisher Copyright: {\textcopyright} 2015 SPIE.; 29th Conference on Metrology, Inspection, and Process Control for Microlithography ; Conference date: 23-02-2015 Through 26-02-2015",

year = "2015",

doi = "10.1117/12.2175623",

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series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Sanchez, \{Martha I.\} and Cain, \{Jason P.\}",

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address = "ארצות הברית",

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Hung, PY, O'Loughlin, TE, Lewis, A, Dechter, R, Samayoa, M, Banerjee, S, Wood, EL & Hight Walker, AR 2015, Potential application of tip-enhanced Raman spectroscopy (TERS) in semiconductor manufacturing. in MI Sanchez & JP Cain (eds), Metrology, Inspection, and Process Control for Microlithography XXIX., 94241S, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9424, SPIE, 29th Conference on Metrology, Inspection, and Process Control for Microlithography, San Jose, United States, 23/02/15. https://doi.org/10.1117/12.2175623

Potential application of tip-enhanced Raman spectroscopy (TERS) in semiconductor manufacturing. / Hung, P. Y.; O'Loughlin, Thomas E.; Lewis, Aaron et al.
Metrology, Inspection, and Process Control for Microlithography XXIX. ed. / Martha I. Sanchez; Jason P. Cain. SPIE, 2015. 94241S (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9424).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Hung, P. Y.

AU - O'Loughlin, Thomas E.

AU - Lewis, Aaron

AU - Dechter, Rimma

AU - Samayoa, Martin

AU - Banerjee, Sarbajit

AU - Wood, Erin L.

AU - Hight Walker, Angela R.

PY - 2015

Y1 - 2015

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AB - Tip-enhanced Raman spectroscopy (TERS), with nanometer spatial resolution, has the capability to monitor chemical composition, strain, and activated dopants and is a promising metrology tool to aid the semiconductor R&D processes. This paper addresses the major challenges which limit the application of TERS from routine measurement: the lack of comparability, reproducibility, calibration, and standardization. To address these issues, we have developed a robust test structure and the ability to generate high-quality tips using a high volume manufacturing (HVM) approach. The qualifying data will be presented.

KW - TERS

KW - Tip enhanced Raman spectroscopy

KW - defect metrology

KW - strained Si

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A2 - Cain, Jason P.

PB - SPIE

T2 - 29th Conference on Metrology, Inspection, and Process Control for Microlithography

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ER -

Hung PY, O'Loughlin TE, Lewis A, Dechter R, Samayoa M, Banerjee S et al. Potential application of tip-enhanced Raman spectroscopy (TERS) in semiconductor manufacturing. In Sanchez MI, Cain JP, editors, Metrology, Inspection, and Process Control for Microlithography XXIX. SPIE. 2015. 94241S. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2175623

Potential application of tip-enhanced Raman spectroscopy (TERS) in semiconductor manufacturing

Abstract

Publication series

Conference

Bibliographical note

UN SDGs

Keywords

Access to Document

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