Preparation and characterization of octadecylsilane monolayers on indium-tin oxide (ITO) surfaces

I. Markovich, D. Mandler*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

62 Scopus citations


The preparation and characterization of octadecylsilane, C18, monolayers on indium-tin oxide (ITO) have been studied carefully. A reproducible procedure was developed for the formation of C18/ITO employing octadecyltrimethoxysilane (OTMS) as a monomer. The films were studied by means of electrochemistry, wettability, infrared and atomic force microscopy. All these measurements provide evidence for the formation of a disorganized, 'brush-type' monolayer with a maximum surface fractional coverage of 0.90 ± 0.04. The surface coverage can be controlled through the silanization time. The applications and implications of such disorganized monolayers in electroanalytical chemistry are discussed.

Original languageAmerican English
Pages (from-to)453-460
Number of pages8
JournalJournal of Electroanalytical Chemistry
Issue number1-2
StatePublished - 16 Mar 2001

Bibliographical note

Funding Information:
This research was supported by the Bi-National Science Foundation (97-00198). I. Turyan and S. Meltzer are warmly acknowledged for carrying out the IR and AFM measurements, respectively.


  • Indium-tin oxide electrode
  • Octadecylsilane
  • Self-assembled monolayers


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