Preparation and characterization of octadecylsilane monolayers on indium-tin oxide (ITO) surfaces

I. Markovich; D. Mandler

doi:10.1016/S0022-0728(00)00458-7

Preparation and characterization of octadecylsilane monolayers on indium-tin oxide (ITO) surfaces

I. Markovich, D. Mandler^*

^*Corresponding author for this work

Institute of Chemistry

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

The preparation and characterization of octadecylsilane, C₁₈, monolayers on indium-tin oxide (ITO) have been studied carefully. A reproducible procedure was developed for the formation of C₁₈/ITO employing octadecyltrimethoxysilane (OTMS) as a monomer. The films were studied by means of electrochemistry, wettability, infrared and atomic force microscopy. All these measurements provide evidence for the formation of a disorganized, 'brush-type' monolayer with a maximum surface fractional coverage of 0.90 ± 0.04. The surface coverage can be controlled through the silanization time. The applications and implications of such disorganized monolayers in electroanalytical chemistry are discussed.

Original language	English
Pages (from-to)	453-460
Number of pages	8
Journal	Journal of Electroanalytical Chemistry
Volume	500
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0728(00)00458-7
State	Published - 16 Mar 2001

Bibliographical note

Funding Information:
This research was supported by the Bi-National Science Foundation (97-00198). I. Turyan and S. Meltzer are warmly acknowledged for carrying out the IR and AFM measurements, respectively.

Keywords

Indium-tin oxide electrode
Octadecylsilane
Self-assembled monolayers

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10.1016/S0022-0728(00)00458-7

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title = "Preparation and characterization of octadecylsilane monolayers on indium-tin oxide (ITO) surfaces",

abstract = "The preparation and characterization of octadecylsilane, C18, monolayers on indium-tin oxide (ITO) have been studied carefully. A reproducible procedure was developed for the formation of C18/ITO employing octadecyltrimethoxysilane (OTMS) as a monomer. The films were studied by means of electrochemistry, wettability, infrared and atomic force microscopy. All these measurements provide evidence for the formation of a disorganized, 'brush-type' monolayer with a maximum surface fractional coverage of 0.90 ± 0.04. The surface coverage can be controlled through the silanization time. The applications and implications of such disorganized monolayers in electroanalytical chemistry are discussed.",

keywords = "Indium-tin oxide electrode, Octadecylsilane, Self-assembled monolayers",

author = "I. Markovich and D. Mandler",

note = "Funding Information: This research was supported by the Bi-National Science Foundation (97-00198). I. Turyan and S. Meltzer are warmly acknowledged for carrying out the IR and AFM measurements, respectively.",

year = "2001",

month = mar,

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doi = "10.1016/S0022-0728(00)00458-7",

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T1 - Preparation and characterization of octadecylsilane monolayers on indium-tin oxide (ITO) surfaces

AU - Markovich, I.

AU - Mandler, D.

N1 - Funding Information: This research was supported by the Bi-National Science Foundation (97-00198). I. Turyan and S. Meltzer are warmly acknowledged for carrying out the IR and AFM measurements, respectively.

PY - 2001/3/16

Y1 - 2001/3/16

N2 - The preparation and characterization of octadecylsilane, C18, monolayers on indium-tin oxide (ITO) have been studied carefully. A reproducible procedure was developed for the formation of C18/ITO employing octadecyltrimethoxysilane (OTMS) as a monomer. The films were studied by means of electrochemistry, wettability, infrared and atomic force microscopy. All these measurements provide evidence for the formation of a disorganized, 'brush-type' monolayer with a maximum surface fractional coverage of 0.90 ± 0.04. The surface coverage can be controlled through the silanization time. The applications and implications of such disorganized monolayers in electroanalytical chemistry are discussed.

AB - The preparation and characterization of octadecylsilane, C18, monolayers on indium-tin oxide (ITO) have been studied carefully. A reproducible procedure was developed for the formation of C18/ITO employing octadecyltrimethoxysilane (OTMS) as a monomer. The films were studied by means of electrochemistry, wettability, infrared and atomic force microscopy. All these measurements provide evidence for the formation of a disorganized, 'brush-type' monolayer with a maximum surface fractional coverage of 0.90 ± 0.04. The surface coverage can be controlled through the silanization time. The applications and implications of such disorganized monolayers in electroanalytical chemistry are discussed.

KW - Indium-tin oxide electrode

KW - Octadecylsilane

KW - Self-assembled monolayers

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JO - Journal of Electroanalytical Chemistry

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Preparation and characterization of octadecylsilane monolayers on indium-tin oxide (ITO) surfaces

Abstract

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Keywords

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