Abstract
The measurement data from the NovaScan 420 Integrated Thickness Monitoring system are gathered during chemical mechanical polishing process steps of several 0.18 and 0.25 technologies. The actual thickness scatter of the top polished oxide layer are analyzed, as well as measurements of the thickness variations of layers below the top oxide. These data are used for the analysis of the substrate/photoresist interface reflectivity variations at lithography steps. The analysis enable simulation of across the wafer reflectivity profiles at the deep ultraviolet wavelengths.
| Original language | English |
|---|---|
| Pages (from-to) | 703-711 |
| Number of pages | 9 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3998 |
| State | Published - 2000 |
| Externally published | Yes |
| Event | Metrology, Inspection, and Process Control for Microlithography XIV - Santa Clara, CA, USA Duration: 28 Feb 2000 → 2 Mar 2000 |