Purification and Improved Nuclear Radiation Detection of Tl₆SI₄ Semiconductor

Keyphrases

• Purification Process 100%
• Semiconductors 100%
• Single Crystal 100%
• Crystal Growth 100%
• Photoresponse 100%
• Nuclear Radiation Detection 100%
• Impurity Analysis 100%
• Material Purification 100%
• High Efficiency 50%
• X-ray 50%
• Photoluminescence Measurements 50%
• Large-sized 50%
• Low Flux 50%
• Spectral Response 50%
• Charge Transport 50%
• Photoemission Spectroscopy 50%
• Valence Band Maximum 50%
• Energy Resolution 50%
• Mobility-lifetime Product 50%
• Improved Properties 50%
• Detector Performance 50%
• Radiation Source 50%
• Full Width at Half Maximum 50%
• High Resistivity 50%
• Stopping Power 50%
• Electron Mobility 50%
• 241Am 50%
• Zone Refining 50%
• Charge Detector 50%
• Bridgman Method 50%
• MeV Particles 50%
• Wide Band Gap Semiconductors 50%
• K X-ray Lines 50%
• Transport Performance 50%
• Electric Field Intensity 50%
• Glow Discharge Mass Spectrometry (GD-MS) 50%

Material Science

• Crystal Growth 100%
• Single Crystal 100%
• Photoluminescence 50%
• Electrical Resistivity 50%
• Electron Mobility 50%
• Photoemission Spectroscopy 50%
• Wide Band Gap Semiconductor 50%
• Glow Discharge Mass Spectrometry 50%
• Crystal Growth From Melt 50%