Quantum materials based on metamorphic InAsSb

S. Suchalkin, G. Belenky, M. Ermolaev, B. Laikhtman, G. Kipshidze, D. Smirnov, S. Moon, T. Valla, S. Svensson, W. Sarney

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Bandgap and carrier dispersion in superlattices (SL) based on InAsSb can be precisely controlled by variation of the layer composition and width. However, when grown strain-balanced on GaSb, possible SL designs are seriously limited. The virtual substrate approach on the other hand removes this limitation thus opening a way to design SLs and QWs with non-generic electronic properties including Dirac carrier dispersion and topologically nontrivial states.

Original languageEnglish
Title of host publication2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728106021
DOIs
StatePublished - Aug 2019
Event2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Miramar Beach, United States
Duration: 19 Aug 201921 Aug 2019

Publication series

Name2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Proceedings

Conference

Conference2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019
Country/TerritoryUnited States
CityMiramar Beach
Period19/08/1921/08/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

Fingerprint

Dive into the research topics of 'Quantum materials based on metamorphic InAsSb'. Together they form a unique fingerprint.

Cite this