Original language | English |
---|---|
Pages (from-to) | 219-222 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 22 |
Issue number | 1-4 |
DOIs | |
State | Published - Aug 1993 |
Radiation and high field induced interface state generation in MOS structures with modified nitrided oxide
J. Shappir*, T. Roter, J. Levinson
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review