Radiation and high field induced interface state generation in MOS structures with modified nitrided oxide

J. Shappir*, T. Roter, J. Levinson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)219-222
Number of pages4
JournalMicroelectronic Engineering
Volume22
Issue number1-4
DOIs
StatePublished - Aug 1993

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