Radiation and high field induced interface state generation in MOS structures with modified nitrided oxide

J. Shappir^*, T. Roter, J. Levinson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	219-222
Number of pages	4
Journal	Microelectronic Engineering
Volume	22
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(93)90161-W
State	Published - Aug 1993

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title = "Radiation and high field induced interface state generation in MOS structures with modified nitrided oxide",

author = "J. Shappir and T. Roter and J. Levinson",

year = "1993",

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