Radiation and high field induced interface state generation in MOS structures with modified nitrided oxide

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Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	219-222
Number of pages	4
Journal	Microelectronic Engineering
Volume	22
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(93)90161-W
State	Published - Aug 1993

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title = "Radiation and high field induced interface state generation in MOS structures with modified nitrided oxide",

author = "J. Shappir and T. Roter and J. Levinson",

year = "1993",

month = aug,

doi = "10.1016/0167-9317(93)90161-W",

language = "אנגלית",

volume = "22",

pages = "219--222",

journal = "Microelectronic Engineering",

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publisher = "Elsevier B.V.",

number = "1-4",

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AU - Levinson, J.

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