Abstract
Using time-resolved photoluminescence spectroscopy over a wide range of temperatures, we were able to probe both radiative and nonradiative relaxation processes in luminescent porous silicon. By comparing the photoluminescence decay times from freshly prepared and oxidized porous silicon, we show that radiative processes should be linked with quantum confinement in small Si nanocrystallites and are not affected by oxidation. In contrast, nonradiative relaxation processes are associated with the state of oxidation where slower relaxation times characterize hydrogen-terminated porous silicon. These results are in a good agreement with the extended vibron model for small Si nanocrystallites.
| Original language | English |
|---|---|
| Article number | 47 |
| Pages (from-to) | 1-6 |
| Number of pages | 6 |
| Journal | Nanoscale Research Letters |
| Volume | 9 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2014 |
Bibliographical note
Funding Information:This work has been partially supported by the Israel Science Foundation (ISF), grant no. 425/09. NAV acknowledges the support of Dr. Ilana Levitan fellowship for women in physics.
Keywords
- Nonradiative processes
- Photoluminescence
- Porous silicon
- Quantum confinement
- Surface chemistry
- The vibron model