Radiative and nonradiative relaxation phenomena in hydrogen- and oxygen-terminated porous silicon

Neta Arad-Vosk, Amir Sa'ar*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


Using time-resolved photoluminescence spectroscopy over a wide range of temperatures, we were able to probe both radiative and nonradiative relaxation processes in luminescent porous silicon. By comparing the photoluminescence decay times from freshly prepared and oxidized porous silicon, we show that radiative processes should be linked with quantum confinement in small Si nanocrystallites and are not affected by oxidation. In contrast, nonradiative relaxation processes are associated with the state of oxidation where slower relaxation times characterize hydrogen-terminated porous silicon. These results are in a good agreement with the extended vibron model for small Si nanocrystallites.

Original languageAmerican English
Article number47
Pages (from-to)1-6
Number of pages6
JournalNanoscale Research Letters
Issue number1
StatePublished - 2014

Bibliographical note

Funding Information:
This work has been partially supported by the Israel Science Foundation (ISF), grant no. 425/09. NAV acknowledges the support of Dr. Ilana Levitan fellowship for women in physics.


  • Nonradiative processes
  • Photoluminescence
  • Porous silicon
  • Quantum confinement
  • Surface chemistry
  • The vibron model


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