Radiative Recombination Changes under Light-Soaking in CsPbBr3 Films on TiO2 and Insulating Glass Contacts: Interface versus Bulk Effects

Jiangang Hu; Laxman Gouda; Adi Kama; Shay Tirosh; Ronen Gottesman

doi:10.1021/acsaem.9b00335

Radiative Recombination Changes under Light-Soaking in CsPbBr₃ Films on TiO₂ and Insulating Glass Contacts: Interface versus Bulk Effects

Jiangang Hu, Laxman Gouda, Adi Kama, Shay Tirosh, Ronen Gottesman^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The steady-state photoluminescence (PL) of CsPbBr₃ films with varying thicknesses was studied under light-soaking on semiconductive and insulating contacts, showing reversible changes in PL, entirely dependent on the nature of the contact and film thicknesses. The PL at 50-100 nm CsPbBr₃ on TiO₂ increased, and decreased in thicker layers, with no thickness-dependent PL in CsPbBr₃ on glass/Al₂O₃. These observations are described using a spatial charge distribution model which interprets the migration of Br^- and V_Br⁺ under light-soaking as suppressing electron injection into the TiO₂ due to upward band bending, enhancing PL at the interface and nonradiative recombination further away from it.

Original language	English
Pages (from-to)	3013-3016
Number of pages	4
Journal	ACS Applied Energy Materials
Volume	2
Issue number	5
DOIs	https://doi.org/10.1021/acsaem.9b00335
State	Published - 28 May 2019
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2019 American Chemical Society.

Keywords

CsPbBr perovskites
light-soaking effect
photoluminescence
solar cells
thin films

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This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1021/acsaem.9b00335

Cite this

@article{4c7aeb9b85494c3382f52c6a86cf7768,

title = "Radiative Recombination Changes under Light-Soaking in CsPbBr3 Films on TiO2 and Insulating Glass Contacts: Interface versus Bulk Effects",

abstract = "The steady-state photoluminescence (PL) of CsPbBr3 films with varying thicknesses was studied under light-soaking on semiconductive and insulating contacts, showing reversible changes in PL, entirely dependent on the nature of the contact and film thicknesses. The PL at 50-100 nm CsPbBr3 on TiO2 increased, and decreased in thicker layers, with no thickness-dependent PL in CsPbBr3 on glass/Al2O3. These observations are described using a spatial charge distribution model which interprets the migration of Br- and VBr+ under light-soaking as suppressing electron injection into the TiO2 due to upward band bending, enhancing PL at the interface and nonradiative recombination further away from it.",

keywords = "CsPbBr perovskites, light-soaking effect, photoluminescence, solar cells, thin films",

author = "Jiangang Hu and Laxman Gouda and Adi Kama and Shay Tirosh and Ronen Gottesman",

note = "Publisher Copyright: {\textcopyright} 2019 American Chemical Society.",

year = "2019",

month = may,

day = "28",

doi = "10.1021/acsaem.9b00335",

language = "אנגלית",

volume = "2",

pages = "3013--3016",

journal = "ACS Applied Energy Materials",

issn = "2574-0962",

publisher = "American Chemical Society",

number = "5",

}

TY - JOUR

T1 - Radiative Recombination Changes under Light-Soaking in CsPbBr3 Films on TiO2 and Insulating Glass Contacts

T2 - Interface versus Bulk Effects

AU - Hu, Jiangang

AU - Gouda, Laxman

AU - Kama, Adi

AU - Tirosh, Shay

AU - Gottesman, Ronen

PY - 2019/5/28

Y1 - 2019/5/28

N2 - The steady-state photoluminescence (PL) of CsPbBr3 films with varying thicknesses was studied under light-soaking on semiconductive and insulating contacts, showing reversible changes in PL, entirely dependent on the nature of the contact and film thicknesses. The PL at 50-100 nm CsPbBr3 on TiO2 increased, and decreased in thicker layers, with no thickness-dependent PL in CsPbBr3 on glass/Al2O3. These observations are described using a spatial charge distribution model which interprets the migration of Br- and VBr+ under light-soaking as suppressing electron injection into the TiO2 due to upward band bending, enhancing PL at the interface and nonradiative recombination further away from it.

AB - The steady-state photoluminescence (PL) of CsPbBr3 films with varying thicknesses was studied under light-soaking on semiconductive and insulating contacts, showing reversible changes in PL, entirely dependent on the nature of the contact and film thicknesses. The PL at 50-100 nm CsPbBr3 on TiO2 increased, and decreased in thicker layers, with no thickness-dependent PL in CsPbBr3 on glass/Al2O3. These observations are described using a spatial charge distribution model which interprets the migration of Br- and VBr+ under light-soaking as suppressing electron injection into the TiO2 due to upward band bending, enhancing PL at the interface and nonradiative recombination further away from it.

KW - CsPbBr perovskites

KW - light-soaking effect

KW - photoluminescence

KW - solar cells

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=85066315886&partnerID=8YFLogxK

U2 - 10.1021/acsaem.9b00335

DO - 10.1021/acsaem.9b00335

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:85066315886

SN - 2574-0962

VL - 2

SP - 3013

EP - 3016

JO - ACS Applied Energy Materials

JF - ACS Applied Energy Materials

IS - 5

ER -