Abstract
The steady-state photoluminescence (PL) of CsPbBr3 films with varying thicknesses was studied under light-soaking on semiconductive and insulating contacts, showing reversible changes in PL, entirely dependent on the nature of the contact and film thicknesses. The PL at 50-100 nm CsPbBr3 on TiO2 increased, and decreased in thicker layers, with no thickness-dependent PL in CsPbBr3 on glass/Al2O3. These observations are described using a spatial charge distribution model which interprets the migration of Br- and VBr+ under light-soaking as suppressing electron injection into the TiO2 due to upward band bending, enhancing PL at the interface and nonradiative recombination further away from it.
| Original language | English |
|---|---|
| Pages (from-to) | 3013-3016 |
| Number of pages | 4 |
| Journal | ACS Applied Energy Materials |
| Volume | 2 |
| Issue number | 5 |
| DOIs | |
| State | Published - 28 May 2019 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2019 American Chemical Society.
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This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- CsPbBr perovskites
- light-soaking effect
- photoluminescence
- solar cells
- thin films
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