Random perculation in metal-Ge mixtures

G. Deutscher*, M. Rappaport, Z. Ovadyahu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

75 Scopus citations

Abstract

We have measured the electrical resistivity of InGe, PbGe and AℓGe mixtures co-evaporated onto room temperature substrates, and studied their microstructure by transmission electron microscopy. In InGe and PbGe, where we have observed a random distribution of the constituents, the metal-insulator transition occurs at a metal concentration of about 15% vol., in agreement with random continuum percolation theory. In contrast, AℓGe has a highly regular granular structure and a much higher critical concentration (∼ 55%), as do most metal-insulator thin film mixtures.

Original languageEnglish
Pages (from-to)593-595
Number of pages3
JournalSolid State Communications
Volume28
Issue number8
DOIs
StatePublished - Nov 1978
Externally publishedYes

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