TY - JOUR
T1 - Random perculation in metal-Ge mixtures
AU - Deutscher, G.
AU - Rappaport, M.
AU - Ovadyahu, Z.
PY - 1978/11
Y1 - 1978/11
N2 - We have measured the electrical resistivity of InGe, PbGe and AℓGe mixtures co-evaporated onto room temperature substrates, and studied their microstructure by transmission electron microscopy. In InGe and PbGe, where we have observed a random distribution of the constituents, the metal-insulator transition occurs at a metal concentration of about 15% vol., in agreement with random continuum percolation theory. In contrast, AℓGe has a highly regular granular structure and a much higher critical concentration (∼ 55%), as do most metal-insulator thin film mixtures.
AB - We have measured the electrical resistivity of InGe, PbGe and AℓGe mixtures co-evaporated onto room temperature substrates, and studied their microstructure by transmission electron microscopy. In InGe and PbGe, where we have observed a random distribution of the constituents, the metal-insulator transition occurs at a metal concentration of about 15% vol., in agreement with random continuum percolation theory. In contrast, AℓGe has a highly regular granular structure and a much higher critical concentration (∼ 55%), as do most metal-insulator thin film mixtures.
UR - http://www.scopus.com/inward/record.url?scp=0018038186&partnerID=8YFLogxK
U2 - 10.1016/0038-1098(78)90587-2
DO - 10.1016/0038-1098(78)90587-2
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???
AN - SCOPUS:0018038186
SN - 0038-1098
VL - 28
SP - 593
EP - 595
JO - Solid State Communications
JF - Solid State Communications
IS - 8
ER -