Abstract
A reactive sputtering technique has been utilized which enables one to deposit in a single run the alloy system a-SixGe1-x: H over the range x=0.05-0.7 and survey IR, optical, and electrical transport properties. The technique can readily be generalized to other binary and ternary semiconductor systems.
Original language | English |
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Pages (from-to) | 634-636 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 44 |
Issue number | 6 |
DOIs | |
State | Published - 1984 |