Reactively sputtered a-SixGe1-x:H alloys with compositional gradient in plane of film

S. Z. Weisz*, M. Gomez, J. A. Muir, O. Resto, R. Perez, Y. Goldstein, B. Abeles

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

A reactive sputtering technique has been utilized which enables one to deposit in a single run the alloy system a-SixGe1-x: H over the range x=0.05-0.7 and survey IR, optical, and electrical transport properties. The technique can readily be generalized to other binary and ternary semiconductor systems.

Original languageEnglish
Pages (from-to)634-636
Number of pages3
JournalApplied Physics Letters
Volume44
Issue number6
DOIs
StatePublished - 1984

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