Reactively sputtered a-SixGe1-x:H alloys with compositional gradient in plane of film

S. Z. Weisz; M. Gomez; J. A. Muir; O. Resto; R. Perez; Y. Goldstein; B. Abeles

doi:10.1063/1.94834

Reactively sputtered a-Si_xGe_1-x:H alloys with compositional gradient in plane of film

S. Z. Weisz^*
, M. Gomez
, J. A. Muir
, O. Resto
, R. Perez
, Y. Goldstein
, B. Abeles

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

A reactive sputtering technique has been utilized which enables one to deposit in a single run the alloy system a-Si_xGe_1-x: H over the range x=0.05-0.7 and survey IR, optical, and electrical transport properties. The technique can readily be generalized to other binary and ternary semiconductor systems.

Original language	English
Pages (from-to)	634-636
Number of pages	3
Journal	Applied Physics Letters
Volume	44
Issue number	6
DOIs	https://doi.org/10.1063/1.94834
State	Published - 1984

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title = "Reactively sputtered a-SixGe1-x:H alloys with compositional gradient in plane of film",

abstract = "A reactive sputtering technique has been utilized which enables one to deposit in a single run the alloy system a-SixGe1-x: H over the range x=0.05-0.7 and survey IR, optical, and electrical transport properties. The technique can readily be generalized to other binary and ternary semiconductor systems.",

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AU - Weisz, S. Z.

AU - Gomez, M.

AU - Muir, J. A.

AU - Resto, O.

AU - Perez, R.

AU - Goldstein, Y.

AU - Abeles, B.

PY - 1984

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AB - A reactive sputtering technique has been utilized which enables one to deposit in a single run the alloy system a-SixGe1-x: H over the range x=0.05-0.7 and survey IR, optical, and electrical transport properties. The technique can readily be generalized to other binary and ternary semiconductor systems.

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Reactively sputtered a-Si_xGe_1-x:H alloys with compositional gradient in plane of film

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