Abstract
During the recent years there is an increasing demand for large homogeneous Ge single crystals to be used as. optical components in high resolution thermal imaging systems. Thus, our research focused on understanding the roles of dopant and stress distribution in large Ge crystals and their influence on the optical performance in the IR region, 8-12 am. More recently, a new application for heavily doped, n-type Ge crystals with low resistivity ('O.1 fl.cm) and high crystalline perfection (EPD "5x1O3cm-2) has been reported. In this paper we present the growth and characterization of large homogeneous Ge single crystals with diameters up to 2k0 mm for IR optics. Preliminary results on the growth of 75 mm diameter Ge single crystals for substrates preparation are given. These substrates can be used in GaAs solar cells for space applications.
Original language | English |
---|---|
Pages (from-to) | 35-45 |
Number of pages | 11 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 1535 |
DOIs | |
State | Published - 1 Nov 1991 |
Event | Passive Materials for Optical Elements 1991 - San Diego, United States Duration: 21 Jul 1991 → … |
Bibliographical note
Publisher Copyright:© 1991 SPIE. All rights reserved.