Reducing Optical Losses in GaN Waveguides – Toward an Electro-Optic Phase Modulator

Ohad Westreich*, Gil Atar, Yossi Paltiel, Noam Sicron

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


In recent years, gallium nitride (GaN) has been investigated as a potential material for various integrated photonic devices. A key component of integrated photonic devices is a voltage-controlled phase modulator in an optical waveguide (WG) design. To date, the main obstacles in the realization of such a device are significant optical losses that are related to various mechanisms. In this research, the main factors for optical losses in a GaN phase modulator are experimentally studied. The suggested design is based on a reverse-biased p–n junction ridge WG scheme. The losses are determined mainly using the Fabry–Perot method at a wavelength of 1064 nm, which is important for high-optical-power applications. The contribution of the ridge waveguide wall roughness losses, the p-doped layer absorption, and the metallic p-contacts is evaluated. Based on these results, an optimized structure of an electro-optical GaN phase modulator is proposed. The modulator voltage response is calculated while taking optical polarization effects into account.

Original languageAmerican English
Article number1700551
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number9
StatePublished - 9 May 2018

Bibliographical note

Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


  • GaN waveguide
  • p-type GaN
  • phase modulator
  • propagation loss
  • roughness


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