Reduction of the mesoscopic conductance-fluctuation amplitude in GaAs/AlGaAs heterojunctions due to spin-orbit scattering

O. Millo; S. J. Klepper; M. W. Keller; D. E. Prober; S. Xiong; A. D. Stone; R. N. Sacks

doi:10.1103/PhysRevLett.65.1494

Reduction of the mesoscopic conductance-fluctuation amplitude in GaAs/AlGaAs heterojunctions due to spin-orbit scattering

O. Millo^*, S. J. Klepper, M. W. Keller, D. E. Prober, S. Xiong, A. D. Stone, R. N. Sacks

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

We have studied weak localization and conductance fluctuations in 2D mesoscopic GaAs/AlGaAs heterojunctions for T=60 mK to 7 K. The weak-localization data show that the spin-orbit scattering rate exceeds the phase-breaking rate below 2 K. At the same time, the conductance-fluctuation amplitude is reduced significantly below 2 K, as compared to that extrapolated from the high-temperature region. Our data agree well with calculations for the effect of spin-orbit scattering on the conductance-fluctuation amplitude. A related effect on the magnetic correlation field is also discussed.

Original language	English
Pages (from-to)	1494-1497
Number of pages	4
Journal	Physical Review Letters
Volume	65
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevLett.65.1494
State	Published - 1990
Externally published	Yes

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title = "Reduction of the mesoscopic conductance-fluctuation amplitude in GaAs/AlGaAs heterojunctions due to spin-orbit scattering",

abstract = "We have studied weak localization and conductance fluctuations in 2D mesoscopic GaAs/AlGaAs heterojunctions for T=60 mK to 7 K. The weak-localization data show that the spin-orbit scattering rate exceeds the phase-breaking rate below 2 K. At the same time, the conductance-fluctuation amplitude is reduced significantly below 2 K, as compared to that extrapolated from the high-temperature region. Our data agree well with calculations for the effect of spin-orbit scattering on the conductance-fluctuation amplitude. A related effect on the magnetic correlation field is also discussed.",

author = "O. Millo and Klepper, {S. J.} and Keller, {M. W.} and Prober, {D. E.} and S. Xiong and Stone, {A. D.} and Sacks, {R. N.}",

year = "1990",

doi = "10.1103/PhysRevLett.65.1494",

language = "אנגלית",

volume = "65",

pages = "1494--1497",

journal = "Physical Review Letters",

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T1 - Reduction of the mesoscopic conductance-fluctuation amplitude in GaAs/AlGaAs heterojunctions due to spin-orbit scattering

AU - Millo, O.

AU - Klepper, S. J.

AU - Keller, M. W.

AU - Prober, D. E.

AU - Xiong, S.

AU - Stone, A. D.

AU - Sacks, R. N.

PY - 1990

Y1 - 1990

N2 - We have studied weak localization and conductance fluctuations in 2D mesoscopic GaAs/AlGaAs heterojunctions for T=60 mK to 7 K. The weak-localization data show that the spin-orbit scattering rate exceeds the phase-breaking rate below 2 K. At the same time, the conductance-fluctuation amplitude is reduced significantly below 2 K, as compared to that extrapolated from the high-temperature region. Our data agree well with calculations for the effect of spin-orbit scattering on the conductance-fluctuation amplitude. A related effect on the magnetic correlation field is also discussed.

AB - We have studied weak localization and conductance fluctuations in 2D mesoscopic GaAs/AlGaAs heterojunctions for T=60 mK to 7 K. The weak-localization data show that the spin-orbit scattering rate exceeds the phase-breaking rate below 2 K. At the same time, the conductance-fluctuation amplitude is reduced significantly below 2 K, as compared to that extrapolated from the high-temperature region. Our data agree well with calculations for the effect of spin-orbit scattering on the conductance-fluctuation amplitude. A related effect on the magnetic correlation field is also discussed.

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SN - 0031-9007

VL - 65

SP - 1494

EP - 1497

JO - Physical Review Letters

JF - Physical Review Letters

IS - 12

ER -

Reduction of the mesoscopic conductance-fluctuation amplitude in GaAs/AlGaAs heterojunctions due to spin-orbit scattering

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